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| New Product Si3433CDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.038 at VGS = - 4.5 V - 20 0.046 at VGS = - 2.5 V 0.060 at VGS = - 1.8 V ID (A)a -6 -6 -6 18 nC Qg (Typ.) FEATURES * TrenchFET(R) Power MOSFET APPLICATIONS * Load Switch * Notebook RoHS COMPLIANT TSOP-6 Top View 1 3 mm 6 (4) S 2 5 Marking Code (3) G AX XXX Lot Traceability and Date Code Part # Code (1, 2, 5, 6) D 3 4 2.85 mm Ordering Information: SI3433CDV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS Limit - 20 8.0 - 6.0a - 6.0a - 5.2b, c - 4.2b, c - 20 - 2.7 - 1.3b, c 3.3 2.1 1.6b, c 1.0b, c - 55 to 150 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C TC = 25 C TC = 70 C Maximum Power Dissipation TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range PD TJ, Tstg W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) b, d t5s Steady State Symbol RthJA RthJF Typical 60 25 Maximum 80 38 Unit C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 68803 S-81950-Rev. A, 25-Aug-08 www.vishay.com 1 New Product Si3433CDV Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = - 4.2 A, dI/dt = 100 A/s, TJ = 25 C IS = - 4.2 A - 0.8 45 40 23 22 TC = 25 C - 2.7 - 20 - 1.2 70 60 A V ns nC ns b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Test Conditions VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS , ID = - 250 A VDS = 0 V, VGS = 8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 85 C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.2 A VGS = - 2.5 V, ID = - 4.8 A VGS = - 1.8 V, ID = - 2 A VDS = - 6 V, ID = - 5.2 A Min. - 20 Typ. Max. Unit V - 18 3 - 0.4 - 1.0 100 -1 - 10 - 20 0.031 0.037 0.046 20 1300 0.038 0.046 0.060 mV/C V nA A A S VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 8 V, ID = - 5.2 A 210 180 30 18 2.1 4.8 6 20 30 35 75 30 15 25 75 25 22 50 20 10 45 27 pF Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = 2.4 ID - 4.2 A, VGEN = - 8 V, Rg = 1 VDD = - 10 V, RL = 2.4 ID - 4.2 A, VGEN = - 4.5 V, Rg = 1 f = 1 MHz VDS = - 10 V, VGS = - 4.5 V, ID = - 5.2 A nC ns 12 50 15 Notes: a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68803 S-81950-Rev. A, 25-Aug-08 New Product Si3433CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 VGS = 5 thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 8 10 12 VGS = 1.5 V 8 6 4 TC = 25 C 2 4 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 125 C 0 0.0 TC = - 55 C 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 2500 Transfer Characteristics R DS(on) - On-Resistance () 0.08 C - Capacitance (pF) 2000 0.06 VGS = 1.8 V VGS = 2.5 V 1500 Ciss 0.04 1000 0.02 VGS = 4.5 V 500 Crss Coss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 5.2 A VGS - Gate-to-Source Voltage (V) 6 VDS = 10 V VDS = 16 V 4 1.5 1.4 Capacitance VGS = 4.5 V; 2.5 V; ID = 5.2 A R DS(on) - On-Resistance 1.3 (Normalized) 1.2 1.1 1.0 0.9 0.8 0 0 5 10 15 20 25 30 0.7 - 50 VGS = 1.8 V; ID = 2 A 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68803 S-81950-Rev. A, 25-Aug-08 www.vishay.com 3 New Product Si3433CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.10 0.09 ID = - 5. 2 A R DS(on) - On-Resistance () 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VSD - Source-to-Drain Voltage (V) TJ = 125 C TJ = 25 C I S - Source Current (A) 10 TJ = 150 C 1 TJ = 25 C VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.9 0.8 0.7 VGS(th) (V) 0.6 ID = 250 A 0.5 0.4 0.3 0.2 - 50 Power (W) 30 40 On-Resistance vs. Gate-to-Source Voltage 20 10 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 s 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 0.01 0.1 BVDSS Limited 1 s, 10 s DC Single Pulse Power 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 68803 S-81950-Rev. A, 25-Aug-08 New Product Si3433CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 4 8 3 I D - Drain Current (A) 6 Power (W) Package Limited 2 4 1 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power, Junction-to-Foot * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68803 S-81950-Rev. A, 25-Aug-08 www.vishay.com 5 New Product Si3433CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 PDM Notes: 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68803. www.vishay.com 6 Document Number: 68803 S-81950-Rev. A, 25-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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