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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD635 DESCRIPTION *DC Current Gain : hFE = 40(Min.)@ IC= 25mA *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min.) *Complement to Type BD636 APPLICATIONS *Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25 w w scs .i w VALUE 60 60 5 2 5 0.3 2 UNIT V .cn mi e V V A A A PC Collector Power Dissipation @ TC=25 TJ Tstg Junction Temperature Storage Temperature Range 30 150 -55~150 W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD635 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.6 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V ICES Collector Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain w w w. sem isc VCE= 60V; VBE= 0 IC= 25mA; VCE= 2V IC= 1A; VCE= 2V .cn i 1.3 V 0.2 mA 40 25 isc Websitewww.iscsemi.cn 2 |
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