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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV37
DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) *Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A
APPLICATIONS *Designed for use in automotive ignition circuits.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VALUE 600
UNIT V
Collector Current- Continuous Collector Current-Peak
Base Current - Continuous
w w
scs .i w
400 8 V V 15 A 30 4 100 150 -65~150 A A W
.cn mi e
PC Tj Tstg
Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP
BUV37
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 5A; IB= 0; L= 15mH
B
400
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 7 A; IB= 70mA
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10 A; IB= 150mA
B
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10 A; IB= 150mA
B
2.7
V
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
0.25
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
w w
scs .i w
IC= 15A; VCE= 5V
.cn mi e
20
40
mA
isc Websitewww.iscsemi.cn


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ComSIT USA

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BUV37B
SGS Semiconductor Ltd Electronic Component RFQ
2998

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