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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2642 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 110V(Min) *High DC Current Gain: hFE= 5000( Min.) @(IC= 5A, VCE= 4V) *Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) *Complement to Type 2SB1687 B APPLICATIONS *Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w scs .i w VALUE UNIT 110 V 110 V 5 V 6 A 1 A .cn mi e VEBO IC Emitter-Base Voltage Collector Current-Continuous IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC 30 W TJ Tstg 150 Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= 30mA ; IB= 0 IC= 5A; IB= 5mA B 2SD2642 MIN 110 TYP. MAX UNIT V 2.5 3.0 100 100 5000 V V A A IC= 5A; IB= 5mA B VCB= 110V; IE= 0 VEB= 5V; IC= 0 IC= 5A; VCE= 4V IE= 0; VCB= 10V; ftest= 1MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time w w P scs .i w Y IE= -0.5A ; VCE= 12V .cn mi e 55 60 pF MHz 0.8 6.2 1.1 s s s VCC= 30V, RL= 6, IC= 5A; IB1= -IB2= 5mA, hFE Classifications O 5000-12000 6500-20000 15000-30000 isc Websitewww.iscsemi.cn 2 |
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