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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB743
*
DESCRIPTION With TO-126 package *Low collector saturation voltage *Excellent hFE linearity APPLICATIONS *For audio frequency power amplifier and general purpose applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -40 -30 -5 -3 -5 -0.6 1.0 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-0.1A ; VCE=-5V 30 60 55 MIN -30 TYP.
2SB743
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT
MAX
UNIT V
-2.0 -2.0 -1 -1
V V A A
320 MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB743
Fig.2 Outline dimensions
3


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