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| SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4577 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low collector-to-emitter saturation voltage. Small-sized package. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 20 15 5 500 1 200 150 -55 to +150 Unit V V V mA A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) Testconditons VCB = 15V, IE=0 VEB = 4V, IC=0 VCE = 2V , IC = 10mA VCE = 2V , IC = 50mA VCB = 10V , f = 1.0MHz IC = 5mA , IB = 0.5mA IC = 200mA , IB = 10mA VBE(sat) IC = 200mV , IB = 10mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 20 15 5 135 300 4.0 15 160 0.95 30 300 1.2 Min Typ Max 0.1 0.1 600 MHz pF mV mV V V V V Unit iA iA hFE Classification Marking Rank hFE 5 135 270 UT 6 200 400 7 300 600 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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