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| Ordering number : ENA0522 CPH6532 SANYO Semiconductors DATA SHEET CPH6532 Applications * NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features * * * Composite type with two NPN transistors contained in one package facilitating high-density mounting. The two chips contained are equivalent to the CPH3216. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on a ceramic board (600mm20.8m) 1unit Mounted on a ceramic board (600mm20.8m) Conditions Ratings 80 80 50 5 1.0 2 200 0.9 1.1 150 --55 to +150 Unit V V V V A A mA W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz 200 420 6 Conditions Ratings min typ max 0.1 0.1 560 MHz pF Unit A A Marking : ET Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11007EA TI IM TC-00000428 No. A0522-1/4 CPH6532 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turm-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=500mA, IB=10mA IC=300mA, IB=6mA IC=500mA, IB=10mA IC=10A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 80 80 50 5 38 332 40 Ratings min typ 130 90 0.81 max 190 135 1.2 Unit mV mV V V V V V ns ns ns Note) The specifications shown above are for each individual transistor. Package Dimensions unit : mm (typ) 7018A-006 2.9 0.15 Electrical Connection 6 5 4 6 5 4 0.2 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 Top view 0.6 2.8 1.6 0.05 1 2 3 0.6 1 2 0.95 3 0.4 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 SANYO : CPH6 Switching Time Test Circuit IB1 IB2 VR 50 RB + 100F VBE= --5V + 470F VCC=25V IC 0.9 PW=20s D.C.1% INPUT 0.2 OUTPUT RL 20IB1= --20IB2=IC=500mA No. A0522-2/4 CPH6532 1.0 IC -- VCE 40m A mA 2 0m A 10mA 8mA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IC -- VBE VCE=2V 0.9 0.8 Collector Current, IC -- A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 6mA 4mA 2mA Collector Current, IC -- A 50mA 30 5C 25C 0.7 0.2 0.1 IB=0mA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT11441 5 Base-to-Emitter Voltage, VBE -- V Ta= 7 --25 C IT11416 hFE -- IC f T -- IC VCE=2V 3 VCE=10V Gain-Bandwidth Product, f T -- MHz Ta=75C 2 1000 7 5 3 2 100 7 5 3 DC Current Gain, hFE 3 2 --25C 25C 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 100 7 5 3 2 IT01648 3 Cob -- VCB f=1MHz Collector Current, IC -- A IT01650 VCE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 Output Capacitance, Cob -- pF 0.1 7 5 10 7 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT01652 3 2 C 75 Ta= C --25 25 C 0.01 0.01 2 3 5 7 0.1 2 3 5 Collector-to-Base Voltage, VCB -- V 5 VCE(sat) -- IC Collector Current, IC -- A 10 7 1.0 IT11418 VBE(sat) -- IC IC / IB=50 IC / IB=50 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 0.1 7 5 1.0 7 5 3 2 Ta= --25C 75C 25C Ta= C 75 C --25 3 2 0.01 C 25 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 1.0 IT11420 7 0.1 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 IT01658 No. A0522-3/4 CPH6532 5 3 2 ASO ICP=2A IC=1A 10 op 1.4 PC -- Ta Mounted on a ceramic board (600mm20.8mm) 1.2 Collector Dissipation, PC -- W Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 1m DC 1.1 1.0 0.9 0.8 s s 100 0 50 s 0m s on To ta 1u er ati ld 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board (600mm20.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Collector-to-Emitter Voltage, VCE -- V Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0522-4/4 10 ms IT11541 0.6 nit iss ipa tio n 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT10764 |
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