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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2752 DESCRIPTION *With TO-126 package *High breakdown voltage *Low collector saturation voltage APPLICATIONS *Low power switching regulator *DC-DC converter *High voltage switch PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 0.5 1.0 0.25 1.0 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.3A; IB1=0.06A,L=10mH IC=300mA; IB=60mA IC=300mA; IB=60mA VCE=400V; VBE=-1.5V TC=125 VEB=5V; IC=0 IC=50mA ; VCE=5V IC=300mA ; VCE=5V 20 10 MIN 400 2SC2752 SYMBOL VCEO(SUS) VCEsat VBEsat ICEX IEBO hFE-1 hFE -2 TYP. MAX UNIT V 1.0 1.2 0.01 1.0 10 80 V V mA A Switching times ton tstg tf Turn-on time Storage time Fall time IC=300mA; IB1=-IB2=60mA PW?50s;VCC?150V RL=500A 1.0 2.5 1.0 s s s hFE-1 Classifications M 20-40 L 30-60 K 40-80 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2752 Fig.2 Outline dimensions 3 |
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