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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB695 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SD731 APPLICATIONS *Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w scs .i w VALUE UNIT -170 V -120 V -5 V -7 A 80 W .cn mi e VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB695 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -170 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -1.5 V VBE(on) Base -Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -170V; IE=0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance w w scs .i w VEB= -5V; IC=0 IC= -1A; VCE= -5V .cn mi e 40 20 350 7 -50 A -50 A 200 IC= -5A; VCE= -5V IE=0; VCB= -10V; ftest= 1.0MHz pF fT Current-Gain--Bandwidth Product IC=-1A; VCE= -5V MHz isc Websitewww.iscsemi.cn 2 |
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