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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1368 DESCRIPTION With TO-220F package Complement to type 2SD2060 Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A Collector power dissipation: PC=25W(TC=25ae ) APPLICATIONS With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Open base Fig.1 simplified outline (TO-220F) and symbol ANG INCH Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current SEM E CONDITIONS OND IC TOR UC VALUE -80 -80 -5 -4 -0.4 UNIT V V V A A Open emitter Open collector Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2.0 W 25 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-3A ;IB=-0.3A IC=-3A;VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=10V 40 15 MIN -80 2SB1368 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -1.0 -1.0 -1.7 -1.5 -30 -100 240 |I |I V V A A IN O Collector output capacitance Y hFE-1 Classifications R 40-80 70-140 ANG CH 120-240 EMIC ES OND TOR UC 9.0 130 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1368 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1368 SEM GE HAN INC OND IC TOR UC 4 |
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