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| Green Product STS8816 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PRODUCT SUMMARY VDSS 20V ID 6A RDS(ON) (m) Max 21 @ VGS=4.5V 30 @ VGS=2.5V SOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 12 TA=25C TA=70C TA=25C TA=70C 6 4.8 24 a Units V V A A A W W C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 C/W Details are subject to change without notice. Nov,25,2008 1 www.samhop.com.tw STS8816 Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current 20 1 10 VGS= 12V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA VGS=4.5V , ID=6A VGS=4V , ID=5.9A VGS=3V , ID=5.5A VGS=2.5V , ID=5A 0.5 0.85 17.5 18 21 24 12 1.5 21 22 26 30 V m ohm m ohm m ohm m ohm S pF pF pF RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance c VDS=5V , ID=6A DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr tD(OFF) tf Qg Qgs Qgd Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=10V,VGS=0V f=1.0MHz 770 175 160 VDD=10V ID=1A VGS=4.5V RGEN=10 ohm VDS=10V,ID=6A, VGS=4.5V 20 50 64 40 11.5 2 4.3 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage VGS=0V,IS=1.3A 0.78 1.3 1.2 A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Nov,25,2008 2 www.samhop.com.tw STS8816 Ver 1.0 25 VGS=4.5V VGS=2.5V VGS=2V 15 ID, Drain Current(A) ID, Drain Current(A) 20 12 15 9 -55 C 6 Tj=125 C 3 0 25 C 10 VGS=1.5V 5 0 0 0.5 1 1.5 2 2.5 3 0.5 1.0 1.5 2.0 2.5 3.0 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 50 40 30 20 10 0 VGS =4.5V VGS =2.5V Figure 2. Transfer Characteristics 1.8 RDS(on), On-Resistance Normalized 1.6 V G S =4.5V ID= 6 A RDS(on)(m ) 1.4 V G S =2.5V ID=5 A 1.2 1.0 0.8 1 6 12 18 24 30 0 25 50 75 100 125 ID, Drain Current(A) Tj, Junction Temperature( C ) 150 T j ( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 1.20 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 V DS =V G S ID=250uA I D=250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 100 125 150 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,25,2008 3 www.samhop.com.tw STS8816 Ver 1.0 60 50 40 20.0 Is, Source-drain current(A) ID=6 A 25 C 10.0 RDS(on)(m ) 30 20 75 C 10 0 125 C 5.0 125 C 75 C 25 C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 1.0 0 0.3 0.6 0.9 1.2 1.5 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Figure 8. Body Diode Forward Voltage Variation with Source Current 5 VGS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) Ciss 800 600 Coss 400 Crss 200 0 0 2 4 6 8 10 12 4 VDS = 10V ID=6A 3 2 1 0 0 2 4 6 8 10 12 14 16 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 80 ID, Drain Current(A) Switching Time(ns) 100 TD(off) Tf Tr 10 1 0 ms 0m s DC 10 1m 0u s 10 s TD(on) 1 10 1 1 VDS=10V,ID=1A VGS=4.5V 10 100 0.1 0.03 0.1 VGS=4.5V Single Pulse TA=25 C 1 10 20 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,25,2008 4 www.samhop.com.tw STS8816 Ver 1.0 VDD t on VIN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S A V IN 50% 10% 50% PULSE WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Nov,25,2008 5 www.samhop.com.tw STS8816 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SOT 26 D b 6 5 4 DETAIL A 1 2 e e1 3 E1 c R1 R A2 A L2 GAUGE PLANE SEATING PLANE A1 L L1 DETAIL A Nov,25,2008 6 www.samhop.com.tw STS8816 Ver 1.0 SOT 26 Tape and Reel Data SOT 26 Carrier Tape 3.50 + 0.05 1.75 + 0.10 +0.10 1.50 0.00 4.00 + 0.10 2.00 + 0.05 A 8.0 + 0.30 B B A 0.25 + 0.05 4.00 + 0.10 3.3 + 0.1 5 R0 .3 +0.10 1.00 0.00 5M ax .3 R0 M ax R0 Bo 3.2 + 0.1 .3 Ko 1.5 + 0.1 SECTION A-A SOT 26 Reel 1.50 178.0 + 0.5 2.2 + 0.5 10.6 9.0 -0 13.5 + 0.5 SCALE 2:1 SOT 26 60 + 0.5 +1.5 R0 .3 SECTION B-B Nov,25,2008 7 www.samhop.com.tw |
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