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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) *Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS *Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i UNIT 100 V 50 V 15 V 15 A 25 A 4 A .cn mi e ICP Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 60 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4131 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 80mA B 0.5 V VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage IC= 5A; IB= 80mA B 1.2 V A A Collector Cutoff Current VCB= 100V ; IE= 0 VEB= 15V ; IC= 0 10 Emitter Cutoff Current 10 hFE DC current gain IC= 5A ; VCE= 1V fT Current-Gain--Bandwidth Product COB Output Capacitance Switching times ton tstg tf Turn-on Time Storage Time ww w scs .i IE= -1A ; VCE= 12V IE=0 ; VCB= 10V; ftest= 1.0MHz .cn mi e 60 360 18 MHz 210 pF 0.5 s s s IC= 5A , IB1= 80mA; IB2= -80mA RL= 4; VCC= 20V 2.0 Fall Time 0.4 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC4131
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