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| SMD Type N-Channel Power MOSFET XP151A13 Features Low on-state resistance : 3 MOSFET SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm RDS(on) = 0.1Max ( VGS = 4.5V ) +0.1 2.4-0.1 RDS(on) = 0.14Max ( VGS = 2.5V ) RDS(on) = 0.25 Max ( VGS = 1.5V ) Ultra high-speed switching Gate Protect Diode Built-in +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate +0.1 0.38-0.1 0-0.1 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current Maximum Power Dissipation -Pulse * Symbol VDS VGS ID IDP PD Rating 20 8 1 4 0.5 250 - 55 to 150 Unit V V A A W /W Thermal Resistance,Junction-to-Ambient Operating Junction and Storage Temperature Range * When implemented on a ceramic PCB RJA TJ,TSTG Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate-Body Leakage Gate Source cutoff Voltage Symbol IDSS IGSS Vgs(off) Testconditons VGS = 20V , VDS = 0V VDS = 8V , VGS = 0V ID=1mA,VDS=10V VGS = 4.5V , ID =0.5A Drain-Source On-State Resistance RDS(on) VGS = 2.5V , ID = 0.5A VGS = 1.5V , ID = 0.1A Forward Transfer Adittance Body Drain Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time |Yfs| VF CISS COSS CRSS td(on) tr td(off) tf VGS= 5V , ID = 0.5A , VDD=10V VDS = 10V , VGS = 0V,f = 1.0MHz ID=0.5A,VDS=10V IF=1A,,VGS=0V 0.5 0.075 0.1 0.17 4.2 0.8 220 120 45 10 15 75 65 ns ns ns ns pF 1.1 Min Typ Max 10 10 1.2 0.1 0.14 0.25 S V Unit A A V www.kexin.com.cn 1 SMD Type XP151A13 Drain Current vs. Drain/Source Voltage MOSFET Drain Current vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Drain Current Drain/Source On-State Resistance vs. Ambient Temp. Gate/Source Cut Off Voltage Variance vs. Ambient Temp. 2 www.kexin.com.cn SMD Type XP151A13 MOSFET www.kexin.com.cn 3 |
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