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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1387
DESCRIPTION *With TO-220Fa package *Low collector saturation voltage *High speed switching time *High DC current gain
APPLICATIONS
*
*High current switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25
CONDITIONS Open emitter Open base Open collector
VALUE -60 -50 -7 -5 -1 2
UNIT V V V A A
PC
Collector power dissipation TC=25 20 150 -55~150
W
Tj Tstg
Junction temperature Storage temperature

Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1387
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Trainsition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A ;IB=-0.075A
B
MIN -50
TYP.
MAX
UNIT V
-0.15 -0.8
-0.4 -1.2 -1 -1
V V A A
IC=-3A ; IB=-0.075A VCB=-50V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IC=-1A ; VCE=-4V IE=0; VCE=-10V;f=1MHz 150 70
400
80 200
MHz pF
Switching times Ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.075A VCC-30V;RL=10 0.2 1.0 0.2 s s s
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1387
Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1387
4


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