 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SRFET AON7702 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFETTM AON7702/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. - RoHS Compliant. - Halogen Free DFN 3x3 Top View Bottom View Features VDS (V) = 30V (VGS = 10V) ID = 13.5A RDS(ON) < 10m (VGS = 10V) RDS(ON) < 14m (VGS = 4.5V) D Pin 1 S S S G D D G D D S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current B Power Dissipation Power Dissipation B C Maximum 30 20 20 20 80 13.5 10 35 14 3.1 2 -55 to 150 Units V V TC=25C TC=100C TA=25C TA=70C TC=25C TC=100C TA=25C A ID IDM IDSM PD PDSM TJ, TSTG A W TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D C Symbol t 10s Steady-State Steady-State RJA RJC Typ 30 60 3.1 Max 40 75 3.7 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7702 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=13.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance VDS=5V, ID=13.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 80 8 12 11 21 0.38 0.5 6 2390 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.5 480 180 1 37 VGS=10V, VDS=15V, ID=13.5A 16 9.3 5.5 9 VGS=10V, VDS=15V, RL=1.1, RGEN=3 IF=13.5A, dI/dt=100A/s 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 100 500 100 1.6 3 10 15 14 A nA V A m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 4250 1.5 48 21 nC nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg (10v) Total Gate Charge Qg (4.5v) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 14 32 16 29 15 38 Body Diode Reverse Recovery Charge IF=13.5A, dI/dt=100A/s ns nC A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA 150 curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G.The maximum current rating is limited by bond-wires. 35 Rev0: Sept 2007 14 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 10V 6.0V 60 4.5V 4.0V 40 35 30 25 ID (A) 40 20 VGS=3V 3.5V ID(A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 10 ID=13.5A 25 1 RDS(ON) (m) 20 15 10 5 -40C 0 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.001 0.0 0.2 25C IS (A) 125C 0.1 25C VGS=10V ID=13.5A 125C 25C -40C VDS=5V 14 12 RDS(ON) (m) VGS=4.5V 10 VGS=10V VGS=4.5V ID=11A 8 6 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 150 125C 35 14 -55 to 150 0.01 -40C Figure 6: Body-Diode Characteristics 60 3 0.4 75 VSD (Volts) 3.5 0.6 0.8 1.0 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=15V ID=13.5A Capacitance (pF) 3000 2500 Ciss 2000 1500 1000 500 0 0 10 20 30 40 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100 1000 10s 100s 1ms 10ms 100ms 1s 10s 100 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 8 VGS (Volts) 6 4 Coss 2 0 TJ(Max)=150C TA=25C 10 ID (Amps) 1 Power (W) RDS(ON) limited 0.1 10 TJ(Max)=150C TA=60C 0.1 1 DC 0.01 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 150 1 35 14 0.1 -55 to 150 0.01 PD Ton 0.001 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) 60 3 10 75 3.5 100 1000 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Price & Availability of AON7702
 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |
