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| SMD Type Transistors NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V) Very small size making it easy to provide high-density small-sized hybrid IC's. Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Collector Current (pulse) Collector Dissipation Junotion Temperature storage Temperature *Mounted on ceramic board (250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating 120 100 15 200 300 500 1.3 * 150 -55 to 150 Unit V V V mA mA mA W Electrical Characteristics Ta = 25 Parameter collector cutoff Current Emitter cutoff current DC Current Gain Gain-Bandwidth product Output Capacitance Collector to Emitter Saturation Voltage Base to Emitter Stauration Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Symbol ICBO IEBO hFE fT cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Testconditons VCB=80V,IE=0 VEB=10V,IC=0 VCE=5V,IC=10mA VCE=5V,IC=100mA VCE=10V,IC=10mA VCB=10V,f=1MHz IC=100mA,IB=2mA IC=100mA,IE=2mA IC=100iA,IE=0 IC=1mA,IB=0 IE=10iA,IC=0 500 400 150 6.5 0.15 0.5 MHz pF V V V V V 1000 Min Typ Max 0.1 0.1 2000 Unit iA iA Marking Marking CG www.kexin.com.cn 1 |
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