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SMD Type Silicon NPN Epitaxial 2SC2714 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 40 30 4 20 4 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain Symbol ICBO IEBO hFE Cre fT Cc.rbb' NF Gpe VCE = 6 V, IE = -1 mA, f = 100 MHz, 2.5 17 23 Testconditons VCB = 18 V, IE = 0 VEB = 4 V, IC = 0 VCE = 6 V, IC = 1 mA VCB = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA 40 0.70 550 30 5.0 Min Typ Max 0.5 0.5 200 pF MHz ps dB dB Unit iA iA hFE Classification Marking Rank hFE QR R 40 80 QO O 70 140 QY Y 100 200 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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