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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6109 DESCRIPTION *DC Current Gain: hFE = 30-150@ IC= -2.5A *Collector-Emitter Sustaining Voltage: VCEO(SUS)= -50V(Min) APPLICATIONS *Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -60 -50 -5 -7 UNIT V V V A Collector Current-Continuous Collector Current-Peak Base Current w ww scs .i -10 -3 40 150 -65~150 .cn mi e A A Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 3.125 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage CONDITIONS IC= -100mA ;IB= 0 IC= -7A; IB= -3A IC= -7A ; VCE= -4V VCE= -60V; VBE(off)= -1.5V VCE= -50V; VBE(off)= -1.5V; TC= 150 VCE= -40V;IB= 0 VEB= -5V; IC= 0 MIN -50 2N6109 MAX UNIT V VCE(sat) VBE(on) ICEX ICEO IEBO hFE-1 hFE-2 COB fT -3.5 -3.0 -0.1 -2.0 -1.0 -1.0 150 V V Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain mA mA mA Output Capacitance Current-Gain--Bandwidth Product w ww scs .i IC= -2.5A ; VCE= -4V IC= -7A ; VCE= -4V IE= 0 ; VCB= -10V; ftest= 1MHz .cn mi e 30 2.3 250 pF MHz IC= -0.5A ; VCE= -4V; ftest= 1MHz 10 isc Websitewww.iscsemi.cn 2 |
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