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74HC5 D391K 2SC2810 DS21T27 04304 AD5696R 10V10X1 AN1111C
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  Datasheet File OCR Text:
 SMD Type
Silicon Epitaxial Planar Diode 1SV217
Diodes
SOD-323
+0.1 1.7-0.1
Unit: mm
+0.05 0.3-0.05
+0.05 0.85-0.05
Features
High Capacitance Ratio:C2V/C2512V=10.5(Typ.) Excellent C-V Characteristics,and Small Tracking Error. Useful for Small Size Tuner.
0.475 0.375
+0.1 2.6-0.1
1.0max
Absolute Maxim um Ratings Ta = 25
Param eter Reverse Voltage Peak Reverse Voltage Junction Tem perature Storage Tem perature Range Sym bol VR VRM Tj Tstg Value 30 35 (RL=10K 125 -55 to +125 ) Unit V V
Electrical C haracteristics T a = 25
P aram eter R everse V oltage R everse C urrent C apacitance C apacitance R atio S eries R esistance N ote : A vailable in m atched group for capacitance to 2.5% . C (M ax.)-C (M in.) C (M in.) (V R =2~25V ) S ym bol VR IR C 2V C 25V C2V/C 25V rs V R = 5V , f = 470 M H z C onditions IR = 1 A M in 30 10 33 2.6 11.5 36 2.88 12.5 0.83 1.0 39 3.2 Typ M ax U nit V nA pF
V R = 28 V f = 1 M H z;V R = 2 V f = 1 M H z;V R = 25 V
0.025
Marking
Marking T6
+0.05 0.1-0.02
+0.1 1.3-0.1
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1SV217(TPH4)
Toshiba America Electronic Components RFQ
1120

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