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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD847 DESCRIPTION *Good Linearity of hFE *High Collector Current *Wide Area of Safe Operation *High Reliability *Complement to Type 2SB757 APPLICATIONS *Audio amplifier applications *Series regulators applications *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 40 40 5 15 5 80 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.56 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD847 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.8 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 0.01 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 5A ; VCE= 2V 40 240 Switching times s ton tstg tf Turn-on Time IC= 15A , IB1= -IB2= 1.5A RL= 2;PW =20s Duty Cycle2% 1.0 Storage Time 2.0 s Fall Time 1.0 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD847
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