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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD717 DESCRIPTION With TO-3P(I) package Low collector saturation voltage High collector power dissipation APPLICATIONS High power switching applications DC-DC converter and DC-AC inverter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 70 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 5 10 2 TC=25ae 80 150 -55~150 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3P(I)) and symbol UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=70V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IC=1A ; VCE=4V IE=0 ; VCB=10V ;f=1MHz 70 30 10 MIN 50 TYP. 2SD717 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob MAX UNIT V 0.4 1.2 10 10 240 |I |I V V A A MHz pF Switching times ton ts tf NDU ICO E SEM ANG INCH Turn-on time Storage time IB1=-IB2=0.3A;RL=5| ;VCC=30V Fall time TOR 350 0.3 2.5 0.4 |I |I |I s s s hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD717 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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