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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD388 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 140 7 Emitter-base voltage Open collector Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae 8 80 150 -55~150 UNIT V V V A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;IB=0 IE=10mA ;IC=0 IC=6A; IB=0.6A IC=6A; IB=0.6A VCB=150V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V 50 20 MIN 140 7 TYP. 2SD388 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V V 2.0 2.5 0.1 0.1 V V mA mA TOR NDU ICO E SEM ANG INCH Transition frequency IC=1A ; VCE=10V 9 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD388 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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