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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3762 DESCRIPTION With TO-3PML package High speed switching High current capability APPLICATIONS For use in high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER CHA IN Collector current Collector dissipation Collector-base voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC MAX 150 100 6 15 UNIT V V V A W ae ae Collector-emitter voltage Emitter-base voltage TC=25ae 65 150 -55~150 Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3762 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 0.6 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=100V ;IE=0 10 |I A IEBO Emitter cut-off current hFE IN DC current gain VEB=4V; IC=0 ANG CH MIC E SE IC=5A ; VCE=5V DUC ON 30 TOR 10 |I 120 A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3762 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 |
Price & Availability of 2SC3762 |
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