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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3591 DESCRIPTION With TO-220C package Fast switching speed Low collector saturation voltage APPLICATIONS High-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 400 200 6 7 12 4 UNIT V V V A A A W ae ae Emitter-base voltage Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3591 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE= 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.8 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=250V ;IE=0 100 |I A IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 hFE -2 IN Fall time DC current gain DC current gain IC=1 A ; VCE=1V fT Transition frequency tf CHA E SEM NG IC=5 A ; VCE=1V OND IC TOR UC 15 10 50 10 0.3 100 |I A IC=0.5 A ; VCE=10V VCC=50V;IC=5A; IB1=-IB2=0.5A ;RL=10| MHz |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3591 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3591 CHA IN E SEM NG OND IC TOR UC 4 |
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