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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2486 DESCRIPTION With TO-3PN package Complement to type 2SA1062 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg IN Collector-base voltage PARAMETER Collector-emitter voltage Emitter-base voltage ANG CH MIC E SE Open emitter Open base Open collector CONDITIONS OND TOR UC MAX 120 120 5 7 12 UNIT V V V A A W ae ae Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=25mA ;IB=0 IC=5A; IB=0.5A IC=5A;VCE=5V VCB=120V; IE=0 VEB=3V; IC=0 IC=0.02A ; VCE=5V IC=1A ; VCE=5V IC=5A ; VCE=5V 20 40 20 MIN 120 TYP. 2SC2486 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT MAX UNIT V 2.0 1.8 50 50 |I |I V V A A 200 Q Transition frequency P 100-200 hFE-2 Classifications R 40-80 CHA IN 60-120 E SEM NG IC=0.5A ; VCE=5V OND IC TOR UC 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2486 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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