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SMD Type NPN General Purpose Transistors BCW31,BCW32,BCW33 Transistors IC SOT-23 Unit: mm Features Low current (max. 100 mA). +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Low voltage (max. 32 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 32 32 5 100 200 200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCW31,BCW32,BCW33 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current BCW31 DC current gain BCW32 BCW33 Collector-emitter saturation voltage VCE(sat) IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency Noise figure VBE(sat) VBE CC fT NF IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 2 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 iA; VCE = 5 V; RS = 2 kU; f = 1 kHz; B = 200 Hz hFE IC = 2 mA; VCE = 5 V Symbol ICBO ICBO IEBO Testconditons IE = 0; VCB = 32 V IE = 0; VCB = 32 V; Tj = 100 IC = 0; VEB = 5 V Transistors IC Min Typ Max 100 10 100 Unit nA iA nA 110 200 420 120 210 750 850 550 2.5 100 120 450 800 250 mV mV mV mV 700 mV pF MHz 10 dB hFE Classification TYPE Marking BCW31 D1 BCW32 D2 BCW33 D3 2 www.kexin.com.cn |
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