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| SI1330EDL New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 2.5 @ VGS = 10 V 60 3 @ VGS = 4.5 V 8 @ VGS = 3 V ID (A) 0.25 0.23 0.05 D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D P-Channel Driver - Notebook PC - Servers SOT-323 SC-70 (3-LEADS) G 1 Marking Code YY 3 D KD XX G Lot Traceability and Date Code Part # Code Top View Ordering Information: SI1330EDL-T1 D S 2 S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 60 Steady State Unit V "20 0.25 0.2 1.0 0.26 0.31 0.20 -55 to 150 0.23 0.28 0.18 0.24 0.19 A W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 355 380 285 Maximum 400 450 340 Unit _C/W C/W Document Number: 72861 S-40853--Rev. A, 03-May-04 www.vishay.com 1 SI1330EDL Vishay Siliconix New Product SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "10 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VGS = 10 V, VDS = 7.5 V On-State Drain Currentb ID(on) VGS = 4.5 V, VDS = 10 V VGS = 3 V, VDS = 10 V VGS = 10 V, ID = 0.25 A Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage rDS(on) gfs VSD VGS = 4.5 V, ID = 0.2 A VGS = 3 V, ID = 0.025 A VDS = 10 V, ID = 0.25 A IS = 0.23 A, VGS = 0 V 0.5 0.4 0.05 1.0 1.4 3.0 350 0.83 1.2 2.5 3 8 mS V W A 60 1 2.0 2.5 "1 1 10 m mA V Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Turn On Time Turn-Off Time Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 30 V, RL = 150 W ID ^ 0.2 A VGEN = 10V 0 2 A, Rg = 10 W 0.4 VDS = 10 V VGS = 4.5 V V, 45 ID ^ 0.25 A 0.11 0.15 173 3.8 4.8 12.8 9.6 10 15 20 15 ns W 0.6 nC Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10, 7 V 0.8 I D - Drain Current (A) 6V 5V I D - Drain Current (A) 0.8 1.0 TJ = -55_C 25_C Transfer Characteristics 0.6 0.6 125_C 0.4 0.4 4V 0.2 3V 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0.2 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 72861 S-40853--Rev. A, 03-May-04 2 SI1330EDL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 4.0 V GS - Gate-to-Source Voltage (V) 3.5 r DS(on) - On-Resistance ( W ) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 VGS = 4.5 V VGS = 10 V 7 6 5 4 3 2 1 0 0.0 VDS = 10 V ID = 250 mA Vishay Siliconix Gate Charge 0.2 0.4 0.6 0.8 1.0 0.1 0.2 0.3 0.4 0.5 0.6 ID - Drain Current (mA) Qg - Total Gate Charge (nC) 2.0 On-Resistance vs. Junction Temperature 1000 VGS = 10 V @ 250 mA Source-Drain Diode Forward Voltage VGS = 0 V 1.6 rDS(on) - On-Resiistance (Normalized) I S - Source Current (A) 100 TJ = 125_C 1.2 VGS = 4.5 V @ 200 mA 0.8 10 TJ = 25_C TJ = -55_C 0.4 0.0 -50 1 -25 0 25 50 75 100 125 150 0.00 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-Source Voltage 5 0.4 0.2 V GS(th) Variance (V) Threshold Voltage Variance over Temperature r DS(on) - On-Resistance ( W ) 4 ID = 250 mA -0.0 -0.2 -0.4 -0.6 -0.8 -50 3 2 ID = 200 mA 1 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 72861 S-40853--Rev. A, 03-May-04 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) www.vishay.com 3 SI1330EDL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 5 10 Safe Operating Area IDM Limited 4 I D - Drain Current (A) rDS(on) Limited 1 Power (W) 3 TA = 25_C 2 1 ms 0.1 ID(on) Limited 0.01 TA = 25_C Single Pulse BVDSS Limited 10 ms 100 ms 1s dc, 10 s 1 0 10-2 0.001 10-1 1 Time (sec) 10 100 600 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 380_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 72861 S-40853--Rev. A, 03-May-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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