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2SK2978
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1060-0500 (Previous: ADE-208-659C) Rev.5.00 Sep.07,2005
Features
* Low on-resistance RDS(on) = 0.09 typ. (VGS = 4 V, ID = 1.5 A) * Low drive current * High speed switching * 2.5 V gate drive devices.
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
3 21 G 4 D 1. Gate 2. Drain 3. Source 4. Drain
S
Note:
Marking is "ZY" *UPAK is a trademark of Renesas Technology Corp.
Rev.5.00 Sep. 07, 2005 page 1 of 6
2SK2978
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID(pulse)Note1 Body-drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 10s, duty cycle 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Ratings 20 10 2.5 5 2.5 1 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 20 10 -- -- 0.5 -- -- 3.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.09 0.12 5.0 260 150 75 15 70 55 70 0.9 75 Max -- -- 10 10 1.5 0.12 0.20 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 20 V, VGS = 0 VGS = 8 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 1.5 A, VGS = 4 V Note3 ID = 1.5 A, VGS = 2.5 V Note3 ID = 1.5 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 4 V, ID = 1.5 A, RL = 6.67
IF = 2.5 A, VGS = 0 IF = 2.5 A, VGS = 0 diF/ dt = 50 A/ s
Rev.5.00 Sep. 07, 2005 page 2 of 6
2SK2978
Main Characteristics
Power vs. Temperature Derating
2.0 10 Test condition (Note 5) : When using the alumina ceramic board (12.5 x 20 x 0.7 mm) 3
10
PW =
1
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
1.5
Drain Current ID (A)
s
o s sh 0 ms (1 s
1
D C O
10
pe
m
1.0
0.3
0.5
Operation in 0.1 this area is limited by RDS(on) 0.03 0.01 Ta = 25C 0.1 0.3 1
ra tio n
t)
(N ot e 5)
0
50
100
150
200
3
10
30
100
Ambient Temperature Ta (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 V 5 V 5 3V 5 Pulse Test
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
2V 3
Drain Current ID (A)
4
2.5 V
4
3
2
2
75C 25C Tc = -25C 1 2 3 4 5
1
VGS = 1.5 V
1
0
2
4
6
8
10
0
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
1 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
1
Static Drain to Source on State Resistance RDS (on) ()
Pulse Test
0.5
0.8
0.6 ID = 5 A 2.5 A 1.5 A 1A 0 2 4 6 8 10
0.2 0.1
VGS = 2.5 V
0.4
4V
0.05
0.2
0.02 0.01
0.1
0.2
0.5
1
2
5
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00 Sep. 07, 2005 page 3 of 6
2SK2978
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
0.25 Pulse Test 0.2 2.5 A ID = 5 A 0.15 2.5 V 0.1
VGS = 4 V
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
10 5 Tc = -25C 25C 2 1 0.5 0.2 0.1 0.1 75C
5A 1, 2.5 A
1A
0.05 0 -40
VDS = 10 V Pulse Test
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
100 1000 300
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Ciss Coss Crss
50
Capacitance C (pF)
di / dt = 50 A / s VGS = 0, Ta = 25C 0.2 0.5 1 2 5 10
100 30 10 3 1 0 5 10 15
20
VGS = 0 f = 1 MHz
10 0.1
20
25
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 2.5 A
Switching Characteristics
Gate to Source Voltage VGS (V)
20 1000 500
VGS = 4 V, VDD = 10 V PW = 5 s, duty < 1 %
50
40
VGS VDD = 10 V 5V
16
Switching Time t (ns)
200
tr
30
12
100 50
20 V DS 10
VDD = 10 V 5V
8
tf td(off) td(on)
4 0 20
20 10 0.1
0
4
8
12
16
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.5.00 Sep. 07, 2005 page 4 of 6
2SK2978
Reverse Drain Current vs. Source to Drain Voltage
(A)
5
4V
Reverse Drain Current IDR
4 2.5 V 3
VGS = 0
2
1 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage
VSD (V)
Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 10 V Vout Monitor Vin Vout Vin 4V 50 10% 10%
Waveform
90%
10%
90% td(on)
90% td(off) tf
tr
Rev.5.00 Sep. 07, 2005 page 5 of 6
2SK2978
Package Dimensions
JEITA Package Code SC-62 RENESAS Code
PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part Name 2SK2978ZYTL-E 2SK2978ZYTR-E Quantity 1000 pcs 1000 pcs Taping Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Sep. 07, 2005 page 6 of 6
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
Sales Strategic Planning Div.
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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