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Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tp = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1700 1600 2600 3200 V A A A TC=25C, Transistor Ptot 12,5 kW VGES +/- 20V V IF 1600 A IFRM 3200 A VR = 0V, t p = 10ms, T Vj = 125C 2 It 660 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 4 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1600A, V GE = 15V, Tvj = 25C IC = 1600A, V GE = 15V, Tvj = 125C IC = 130mA, VCE = VGE, Tvj = 25C VGE(th) 4,5 VCE sat min. typ. 2,6 3,1 5,5 max. 3,1 3,6 6,5 V V V VGE = -15V ... +15V QG 19 C f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies 105 nF f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V VCE = 1700V, V GE = 0V, Tvj = 25C VCE = 1700V, V GE = 0V, Tvj = 125C VCE = 0V, V GE = 20V, Tvj = 25C Cres ICES 5,3 0,04 20 3 160 400 nF mA mA nA IGES prepared by: Alfons Wiesenthal approved by: Christoph Lubke; 06.02.2001 date of publication: 19.01.2001 revision: 2 (Serie) 1(8) FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip IC = 1600A, V CE = 900V, V GE = 15V RG = 0,9, Tvj = 125C, LS = 50nH IC = 1600A, V CE = 900V, V GE = 15V RG = 0,9, Tvj = 125C, LS = 50nH tP 10sec, V GE 15V TVj125C, VCC=1000V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 6400 12 A nH Eoff 670 mWs Eon 430 mWs tf 0,15 0,16 s s td,off 1,2 1,2 s s tr 0,19 0,19 s s td,on 0,3 0,3 s s min. typ. max. RCC+EE 0,08 m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 1600A, V GE = 0V, Tvj = 25C IF = 1600A, V GE = 0V, Tvj = 125C IF = 1600A, - diF/dt = 9600A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C Sperrverzogerungsladung recovered charge IF = 1600A, - diF/dt = 9600A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 1600A, - diF/dt = 9600A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C Erec 210 380 mWs mWs Qr 300 560 As As IRM 1400 1700 A A VF min. typ. 2,1 2,1 max. 2,5 2,5 V V 2(8) FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK 0,008 RthJC typ. max. 0,01 0,017 K/W K/W K/W Tvj 150 C Top -40 125 C Tstg -40 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M4 terminals M8 G 1050 min. M1 AlN 17 mm 10 mm 275 5 Nm M2 2 8 - 10 Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 3500 3000 2500 IC [A] 2000 1500 Tj = 25C Tj = 125C 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 3500 VGE = 20V IC = f (VCE) T vj = 125C 3000 VGE = 15V VGE = 12V VGE = 10V 2500 VGE = 9V VGE = 8V IC [A] 2000 1500 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 3500 3000 Tj = 25C Tj = 125C 2500 IC [A] 2000 1500 1000 500 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 3500 Tvj = 25C IF = f (VF) 3000 Tvj = 125C 2500 IF [A] 2000 1500 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) Rgon = Rgoff =0,9, VCE = 900V, Tj = 125C, VGE = 15V 1800 1600 1400 1200 E [mJ] 1000 800 600 400 200 0 0 500 1000 1500 2000 2500 3000 3500 Eoff Eon Erec IC [A] Schaltverluste (typisch) Switching losses (typical) 2500 Eon Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 1600A , VCE = 900V , Tj = 125C, VGE = 15V 2000 Eoff Erec E [mJ] 1500 1000 500 0 0 1 2 3 4 5 6 7 RG [] 6(8) FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 0,1 0,01 ZthJC [K / W] 0,001 Zth:Diode Zth:IGBT 0,0001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 0,94 0,027 7,85 0,0287 2 4,72 0,052 3,53 0,0705 3 1,425 0,09 1,12 0,153 4 2,92 0,838 4,52 0,988 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 3500 3000 2500 Rg = 0,9 Ohm, T vj= 125C IC,Modul IC [A] 2000 1500 1000 500 0 0 200 400 600 800 1000 IC,Chip 1200 1400 1600 1800 VCE [V] 7 (8) FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Auere Abmessungen / external dimensions 8(8) FZ1600R17KF6C B2.xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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