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 Semiconductor
SBT42F
NPN Silicon Transistor
Descriptions
* High voltage application * Telephone application
Features
* Collector-Emitter voltage VCEO=SBT42F : 300V * Complementary pair with SBT92F
Ordering Information
Type NO. SBT42F Marking M1A Package Code SOT-23F
Outline Dimensions
unit :
mm
2.40.1 1.60.1
1
2.90.1 1.90 BSC
3
0.40.05
2
0.150.05
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2077-000
0.90.1
0~0.1
1
SBT42F
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter Current Collector dissipation Junction temperature Storage temperature * Package Mounted on 99.5% Alumina 10x8x0.6mm
(Ta=25C)
Symbol
VCBO VCEO VEBO IC IE PC* Tj Tstg
Ratings
300 300 6 500 -500 350 150 -55~150
Unit
V V V mA mA mW C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE
* * *
Test Condition
IC=100A, IE=0 IC=1mA, IB=0 IE=100A, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=20V, IC=10mA VCB=20V, IE=0, f=1MHz
Min. Typ. Max.
300 300 6 40 50 0.1 0.1 0.5 0.9 3
Unit
V V V A A V V MHz pF
VCE(sat) fT Cob
VBE(sat)
* Pulse Tester Pulse Width 300 , Duty Cycle 2.0%
KST-2077-000
2
SBT42F
Electrical Characteristic Curves
Fig. 1 hFE - IC Fig. 2 VCE(sat),VBE(sat) - IC
Fig. 3 fT - IC
Fig. 4 COb - VR
KST-2077-000
3


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