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| AP4409AGEM RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic SO-8 S S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S -35V 7.5m -14.5A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3a 3a Rating -35 20 -14.5 -12 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3a Value 50 Unit /W Data and specifications subject to change without notice 1 200801091 AP4409AGEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-7A VGS=-4V, ID=-7A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) Min. -35 -1 - Typ. 7 58 7 37 15 13 76 60 640 530 Max. Units 7.5 15 -3 -10 -25 30 90 V m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-14A VDS=-30V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 4100 6600 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-14A, VGS=0V IS=-14A, VGS=0V, dI/dt=100A/s Min. - Typ. 46 44 Max. Units -1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board a, t <10sec (a) 1 in 2 pad of 2 oz copper (b) 125/W when mounted on a 0.003 2 in pad of 2 oz copper THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP4409AGEM 50 50 T A = 25 C 40 o -ID , Drain Current (A) -ID , Drain Current (A) - 10V -7.0 V -5.0 V -4.5 V V G = - 3.0 V T A = 150 C 40 o -10V - 7.0 V - 5.0 V - 4.5 V V G = - 3.0 V 30 30 20 20 10 10 0 0 0 1 2 3 4 0 1 2 3 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 18 1.8 ID=-7A T A =25 16 I D =-7A V G =-10V Normalized RDS(ON) 2 4 6 8 10 RDS(ON\) (m) 14 1.4 12 10 1.0 8 6 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 10 8 1.4 T j =150 C 6 o T j =25 C o Normalized -VGS(th) (V) -IS(A) 1.0 4 0.6 2 0 0 0.2 0.4 0.6 0.8 1 1.2 0.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4409AGEM 16 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) 12 ID= -14A V DS = - 30 V C iss C (pF) 8 1000 C oss C rss 4 0 0 30 60 90 120 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 10 1ms 0.2 0.1 0.1 10ms 1 0.05 -ID (A) 100ms 1s 0.1 0.02 PDM 0.01 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + T a T A =25 o C Single Pulse 0.01 0.01 0.1 1 10 DC 100 Single Pulse Rthja=125oC/W 0.001 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D SYMBOLS Millimeters MIN NOM MAX A 8 7 6 5 E1 1 E 1.35 0.10 0.33 0.19 4.80 3.80 5.80 0.38 0 1.55 0.18 0.41 0.22 4.90 3.90 6.15 0.71 4.00 1.27 TYP 1.75 0.25 0.51 0.25 5.00 4.00 6.50 1.27 8.00 A1 B C D E1 E L 2 3 4 e B e A A1 DETAIL A L 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. c DETAIL A Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4409AGEM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 |
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