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AEGIS
SEMICONDUTORES LTDA.
A5A:820.XX
VOLTAGE RATINGS
Part Number A5A:820.24 A5A:820.26 A5A:820.28 A5A:820.30 A5A:820.32 A5A:820.34 A5A:820.36 A5A:820.38 A5A:820.40 A5A:820.42 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 175O C 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 TJ = -40 to 0 C 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200
O
VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175 C 2500 2700 2900 3100 3300 3500 3700 3900 4100 4300
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 630 125 1250 12.80 IFSM Max. Peak non-rep. surge current 13.95 kA 15.23 16.60 7510 I t Max. I t capability
2 2
UNITS
O O
NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 175 C, rated VRRM applied after surge.
O
C C C
A
O
IF(RMS) Nom. RMS current
A
Initial TJ = 175OC, no voltage applied after surge.
Initial TJ = 175OC, rated VRRM applied after surge.
8190 10550 11500
kA s
2
t = 8.3 ms t = 10ms t = 8.3 ms Initial TJ = 175OC, no voltage applied after surge.
2
Initial TJ = 175OC, no voltage applied after surge. It
It
2 1/2
Max. I t
2 1/2
capability
12600 1250
kA s
2 1/2
for time tx = I t
2 1/2
*
tx1/2.
(0.1 < tx < 10ms). -
F Mounting Force
N.m
AEGIS
SEMICONDUTORES LTDA.
A5A:820.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.60 --------15 --------85(3.0) TO-200AC MAX. UNITS 1.89 0.824 0.871 0.459 0.279 75 0.050 0.054 0.055 0.015 --O O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 1979A. O TJ = 175 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. rated VRRM
O O O
V V mW mA
C/W DC operation, double side C/W 180 sine wave, double side
O
C/W 120 rectangular wave, duble side Mtg. Surface smooth, flat and greased. Single side. O C/W For double side, divide value by 2. -----
g(oz.)
175
Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 100 90 80 0 200
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 165 160 155 150 145 140 135 130 125 120 115 110 105 100 0 100 200 300 400 500 600 700 800
*Sinusoidal waveform 120 180 30 60 90
30 60 90 120 180
DC
400
600
800
1000
1200
1400
Average Forward Current (A)
*Rectangular waveform
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:820.XX
Maximum Average Forward Power Loss
12000
30
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
14000 12000 10000 8000 6000 4000 2000 0
*Sinusoidal waveform
10000
8000
60
60
6000
90 120
90 120 180
4000
180 DC
2000
0 0 200 400 600 800 1000 1200 1400
*Rectangular waveform
0
200
400
600
800
1000
1200
1400
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
10000
Forward Voltage Drop
1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
2 3 4 5
Instantaneous Forward Current (A)
0.1
1000
0.01
125
25C
100 0 1
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:820.XX
TO-200AC
Fig. 7 - Outline Characteristics

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