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VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 3600 A 5650 A 55000 A 1.03 V 0.16 m Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Jan. 02 * * * * * Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDSM, VRSM VDRM, VRRM VRSM1 dV/dtcrit Parameter Conditions f = 5 Hz, tp = 10ms f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125C 5STP 34N5200 5STP 34N5000 5STP 34N4600 5200 V 4400 V 5700 V 5000 V 4200 V 5500 V 2000 V/s min typ max 500 500 Unit mA mA 4600 V 4000 V 5100 V Characteristic values Symbol Conditions IDSM IRSM VDSM, Tj = 125C VRSM, Tj = 125C Forwarde leakage current Reverse leakage current VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 81 typ 90 max 108 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Air strike distance Symbol Conditions m DS Da min 56 22 typ 2.9 max 1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 34N5200 On-state Maximum rated values 1) Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions ITAVM ITRMS ITSM I2t ITSM I2t tp = 10 ms, Tj = 125C, VD=VR = 0 V tp = 8.3 ms, Tj = 125C, VD=VR=0 V Half sine wave, Tc = 70C min typ max 3600 5650 55000 15125 60000 14940 Unit A A A kA2s A kA2s Unit V V m mA mA mA mA Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT VT0 rT IH IL IT = 3000 A, Tj= 125C IT = 2300 A - 7000 A, Tj= 125C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C min typ max 1.54 1.03 0.16 125 75 500 250 Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Cont. Tj = 125C, ITRM = 3000 A, f = 50 Hz VD 0.67VDRM, Cont. IFG = 2 A, tr = 0.5 s f = 1Hz Tj = 125C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/s, VD 0.67VDRM, dvD/dt = 20 V/s, min typ max 250 1000 Unit A/s A/s s Circuit-commutated turn-off tq time Characteristic values 700 Parameter Recovery charge Delay time Symbol Conditions Qrr td Tj = 125C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/s VD = 0.4VDRM, IFG = 2 A, tr = 0.5 s min 7000 typ max 9000 3 Unit As s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1002-03 Jan. 02 page 2 of 6 5STP 34N5200 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss Average gate power loss Characteristic values Symbol Conditions VFGM IFGM VRGM PG PGAV Symbol Conditions VGT IGT VGD IGD Tj = 25C Tj = 25C VD = 0.4 x VDRM, Tvjmax = 125C VD = 0.4 x VDRM, Tvjmax = 125C For DC gate current min typ max 12 10 10 3 Unit V A V W see Fig. 9 min typ max 2.6 400 0.3 10 Unit V mA V mA Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tj min typ max 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double side cooled Anode side cooled Cathode side cooled Double side cooled Single side cooled -40 min typ 140 max 5.7 11.4 11.4 1 2 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: ZthJC(t) = a Ri(1 - e -t/ i ) i =1 i Ri(K/kW) i(s) 1 3.4 0.8685 2 1.26 0.1572 3 0.68 0.0219 4 0.35 0.0078 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1002-03 Jan. 02 page 3 of 6 5STP 34N5200 On-state characteristic model: VT = A + B iT + C ln(iT +1) + D IT Valid for iT = 500 - 14000 A A 1.0649e+ B 1.0500e-4 C -3.8879e-2 D 8.1550e-3 Fig. 2 On-state characteristics. Tj=125C, 10ms half sine Fig. 3 On-state characteristics. Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1002-03 Jan. 02 page 4 of 6 5STP 34N5200 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/s 1 s 5...20s Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommendet gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1002-03 Jan. 02 page 5 of 6 5STP 34N5200 Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1002-03 Jan. 02 |
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