|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SSM6K34TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K34TU High Current Switching Applications Power Management Switch Applications * * 4.5Vdrive Low on resistance: :Ron = 77 m (max) (@VGS = 4.5 V) :Ron = 50 m (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 20 3 6 500 150 -55~150 Unit V V A mW C C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Note: 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC JEITA TOSHIBA 2-2T1D Weight: 7.0 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristics Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Total gate charge Gate-source charge Gate-drain charge Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs RDS (ON) Ciss Crss Coss Qg Qgs Qgd ton toff VDSF VDS = 24 V, IDS= 3.0 A VGS = 10 V VDD = 15 V, ID = 2 A, VGS = 0~10 V, RG = 4.7 ID = -3A, VGS = 0V (Note2) VDS = 10 V, VGS = 0, f = 1 MHz Test Condition ID = 10 mA, VGS = 0 ID = 10 mA, VGS = -20 V VDS = 30 V, VGS = 0 VGS = 16 V, VDS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2 A ID = 2 A, VGS = 4.5 V ID = 2 A, VGS = 10 V (Note2) (Note2) (Note2) Min 30 15 1.3 3.4 Typ. 6.8 58 38 470 60 80 10 7.6 2.4 8.3 22 -0.8 Max 10 10 2.5 77 50 -1.2 ns V pF Unit V A A V S m nC Drain-Source forward voltage Note2: Pulse test 1 2007-11-01 SSM6K34TU Switching Time Test Circuit (a) Test Circuit (b) VIN OUT IN 0V RG 10 s VDD = 15 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C 10% 10 V 90% 10 V 0 VDD (c) VOUT VDD 90% 10% tr ton tf toff VDS (ON) Marking 6 5 4 Equivalent Circuit (Top View) 6 5 4 KNC 1 2 3 1 2 3 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM6K34TU ID - VDS 5 8.0 4 6.0 10 4.5 3.8 3.5 Common source Ta = 25C Pulse test 10 10 8.0 6.0 4.5 ID - VDS 3.8 Common source Ta = 25C Pulse test 8 ID (A) 3 ID (A) 3.2 6 3.5 Drain current 2 3.0 1 VGS = 2.8 V 0 Drain current 4 3.2 2 3.0 VGS = 2.8 V 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 8 Common source 2.0 VDS = 10 V Pulse tset 6 VDS - VGS Common source Ta= 25 Pulse test (V) VDS Drain-source voltage 25 100 Ta = -55C 1.6 (A) Drain current ID 1.2 4 0.8 2 0.4 1 2 ID = 4A 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 100 Common source VDS = 10 V Ta = -55C 10 100 25 Pulse test RDS (ON) - ID Forward transfer admittance Yfs (S) Drain-source ON resistance RDS (ON) (m) 4.5 30 VGS = 10V 1 Common source Ta = 25C Pulse test 1 10 0.1 0 0.3 1 3 10 10 0.1 Drain current ID (A) Drain current ID (A) 3 2007-11-01 SSM6K34TU RDS (ON) - Ta 120 Common source ID = 4A 2A VGS = 4.5V 60 1A Pulse test 10 10 IDR - VDS 5.0 3.0 1.0 VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test 0.1 0 Drain reverse current IDR (A) 100 5 3 Drain-source ON resistance RDS (ON) (m ) 80 40 ID = 4, 2, 1A 20 VGS = 10V 0 -80 -40 0 40 80 120 160 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 Ciss 3 Vth - Ta (pF) 100 Vth (V) Crss 10 Gate threshold voltage Coss 2 Capacitance C Common source VGS = 0 V f = 1 MHz Ta = 25C 1 Common source VDS = 10 V ID = 1mA Pulse test 1 0.1 0.3 1 3 5 10 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) Dynamic Input Characteristic Common Source rth - tw 100 (V) ID = 3.0 A 8 Ta = 25C Gate-Source voltage VGS rth (C /W) VDD = 24V 10 100 VDD = 15V 4 Transient thermal impedance 6 10 Single Pulse Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) 2 2 0 0 2 4 6 8 10 1 0.00 0.01 0.1 1 10 100 1000 Total Gate Charge Qg (nC) Pulse width tw (s) 4 2007-11-01 SSM6K34TU RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01 |
Price & Availability of SSM6K34TU | |
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |