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SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J51TU High Current Switching Applications * * Suitable for high-density mounting due to compact package Low on-resistance: Ron = 54 m (max) (@VGS = -2.5 V) 85 m (max) (@VGS = -1.8 V) 150m(max) (@VGS = -1.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -12 8 -4 -8 500 150 -55~150 Unit V V A mW C C 1,2,5,6 : Drain : Gate 3 : Source 4 JEDEC - Note: JEITA Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 2-2T1D TOSHIBA temperature, etc.) may cause this product to decrease in the Weight: 7 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 KPC 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6J51TU Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs Test Condition VGS = 8 V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = +8 V VDS = -12 V, VGS = 0 VDS = -3 V, ID = -1 mA VDS = -3 V, ID = -2.0 A ID = -2.0 A, VGS = -2.5 V Drain-Source on-resistance RDS (ON) ID = -1.0 A, VGS = -1.8 V ID = -0.3 A, VGS = -1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note 2) (Note 2) (Note 2) (Note 2) Min - -12 -4 - -0.3 6.0 Typ. Max 10 Unit A V A V S - - - - - 12.0 38 48 60 1700 190 210 57 120 - - -10 -1.0 - 54 85 150 - - - - - - - - m VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, ID = -2.0 A, VGS = 0~-2.5 V, RG = 4.7 - - - - - pF pF ns Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit 0 -2.5 V 10 s VDD = -10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C ID (b) VIN out 0V 10% 90% in RG VDD -2.5 V VDS (ON) 90% 10% tr ton (c) VOUT VDD tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 2 2007-11-01 SSM6J51TU -8 -4V -7 ID - VDS -1.5V Common Source Ta = 25C -10000 Common Source -1000 VDS = -3 V ID - VGS -6 -5 -4 -3 -2 -1 0 -2.5V (mA) (A) ID -100 Ta = 85C -10 25C -1 -25C Drain current VGS=-1.2V Drain current -2 -1.8V ID -0.1 0 -0.5 -1 -1.5 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Drain - Source voltage VDS (V) Gate - Source voltage VGS (V) RDS (ON) - VGS 200 ID = -0.3 A 200 Common Source RDS (ON) - VGS ID = -2A Common Source 150 Drain - Source on-resistance RDS (ON) (m) 150 100 Drain - Source on-resistance RDS (ON) (m) 100 25C 50 Ta = 85C -25C 0 0 -2 -4 -6 -8 25C 50 Ta = 85C -25C 0 0 -2 -4 -6 -8 Gate - Source voltage VGS (V) Gate - Source voltage VGS (V) RDS (ON) - ID 100 Common Source Ta = 25C 100 RDS (ON) - Ta Common Source Drain - Source on-resistance RDS (ON) (m) Drain - Source on-resistance RDS (ON) (m) 80 -1.5V 60 -1.8V 40 -2.5V 80 60 ID =-0.3A / VGS = -1.5 V 40 -1A / -1.8 V 2A / -2.5 V 20 -4V 20 0 0 -2 -4 -6 -8 0 -50 0 50 100 150 Drain current ID (A) Ambient temperature Ta (C) 3 2007-11-01 SSM6J51TU Vth - Ta Common Source |Yfs| - ID VDS = -3V ID = -1mA Vth (V) Yfs -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -25 0 25 50 75 (S) -0.8 30 10 3 1 0.3 0.1 Common Source 0.03 0.01 1 VDS = -3V Ta = 25C -10 -100 -1000 -10000 100 125 150 Forward transfer admittance Gate threshold voltage Ambient temperature Ta (C) Drain current ID (mA) 5000 3000 C - VDS -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 00 Dynamic Input Characteristic (pF) Ciss 1000 500 300 Coss Crss C VGS (V) 100 50 30 Common Source Ta = 25C f = 1 MHz VGS = 0 V -1 -10 Gate-Source voltage VDD = -10V Capacitance Common Source ID = -4 A Ta = 25C 20 40 60 80 100 120 10 -0.1 -100 Drain - Source voltage VDS (V) Total gate charge Qg (nC) t - ID 1000 -8 Common Source VGS = 0V Ta = 25C -6 IDR - VDS toff (A) (ns) D IDR S 100 tf t IDR ton Drain reverse current Switching time G -4 10 tr 1 0.01 Common Source VDD = -10 V VGS = 0-2.5V Ta = 25C RG = 4.7 0.1 1 10 -2 0 0 0.2 0.4 0.6 0.8 1 1.2 Drain current ID (A) Drain-Source voltage VDS (V) 4 2007-11-01 SSM6J51TU rth - tw rth (C 1000 Single Pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Transient thermal impedance /W) 100 10 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t 2 Cu pad: 645 mm ) PD - Ta 1.2 -30 (W) Mounted on FR4 board 1 t = 10 s 0.8 (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm ) -10 ID max (Pulsed) * ID max (Continuous) 1 ms* 10 ms* (A) Drain power dissipation -4 ID PD 0.6 Drain current -1 DC operation -0.3 Ta = 25C DC 0.4 10s* 0.2 -0.1 *: Single Non-repetitive Pulse -0.03 Ta = 25C Curves must be derated linearly -0.01 -0.1 with increase in temperature. -0.3 -1 -3 -10 -30 -100 0 0 50 100 150 Ambient temperature Ta (C) Drain-Source voltage VDS (V) 5 2007-11-01 SSM6J51TU RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01 |
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