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2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3374 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 4.0 (typ.) High forward transfer admittance: Yfs = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 1 2 1.3 122 1 0.13 150 -55 to150 Unit V V V A A W mJ A mJ C C Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-8M1B Weight: 0.54 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch-a) Max 96.1 Unit C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 203 mH, RG = 25 , IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-06 2SK3374 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 0.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min 30 450 2.0 0.3 VOUT 10 RL = 400 VDD 200 V - VDD 360 V, VGS = 10 V, ID = 1 A - 70 5 3 2 nC 30 15 ns Typ. 3.7 0.7 180 2 20 7 Max 10 100 4.0 4.6 pF Unit A V A V V S 10 V VGS 0V Turn-ON time Switching time Fall time ton tf Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 350 1.3 Max 1 2 -1.7 Unit A A V ns nC Marking K3374 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3374 ID - VDS 1.0 Common source Ta = 25C pulse test 2.0 10 8.0 5.75 6.0 5.5 1.6 10 8.0 ID - VDS 6.25 6.0 Common source Ta = 25C pulse test 0.8 Drain current ID (A) Drain current ID (A) 0.6 5.25 1.2 5.75 0.4 5.0 4.75 0.8 5.5 5.25 0.2 VGS = 4.5 V 0.4 5.0 VGS = 4.5 V 0 0 2 4 6 8 10 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 2.0 Common source VDS = 20 V pulse test 20 VDS - VGS Common source Ta = 25C pulse test 1.6 VDS (V) Drain-source voltage 100 16 Drain current ID (A) 1.2 12 0.8 8 ID = 1 A 0.25 0 0.5 0.4 25 Ta = -55C 4 0 0 2 4 6 8 10 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 5 Common source 3 VDS = 20 V pulse test 1 0.5 0.3 Ta = -55C 100 50 Common source RDS (ON) - ID 30 Ta = 25C Pulse test Forward transfer admittance Yfs Drain-source on resistance RDS (ON) () 25 10 0.1 0.05 0.03 5 3 0.01 0.01 0.03 0.1 0.3 1 3 10 1 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2006-11-06 2SK3374 RDS (ON) - Ta () 16 Common source pulse test 12 0.5 10 Common source Ta = 25C 3 pulse test IDR - VDS Drain-source on resistance RDS (ON) Drain reverse current IDR (A) VGS = 10 V 1 ID = 1A 8 0.25 0.3 0.1 10 3 4 0.03 1 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2 0 -80 -40 0 40 80 160 0.01 0 -0.2 -0.4 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 500 300 5 Vth - Ta Common source VDS = 10 V ID = 1 mA pulse test Vth (V) Gate threshold voltage Ciss 4 (pF) Capacitance C 100 50 30 Coss 10 5 3 Common source VGS = 0 V f = 1 MHz Ta = 25C 0.3 0.5 1 3 5 10 3 2 1 Crss 30 50 100 0 -80 -40 0 40 80 120 160 1 0.1 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 500 Dynamic input/output characteristics Common source ID = 1 A Ta = 25C pulse test VDS 90 300 VDS = 360 V 200 8 12 180 20 Drain power dissipation PD (W) VDS (V) 1.6 400 16 Drain-source voltage 0.8 0.4 100 VGS 4 0 0 40 80 120 160 200 0 0 2 4 6 8 0 10 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2006-11-06 Gate-source voltage 1.2 VGS (V) 2SK3374 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-a) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.003 0.001 0.0005 10 Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty = t/T Rth (ch-a) = 96.1C/W 100 1m 10 m 100 m 1 10 100 Pulse width tw (S) Safe operating area 10 150 EAS - Tch Avalanche energy EAS (mJ) ID max (pulsed) * 1 ID max (continuous) 100 s * 120 Drain current ID (A) 1 ms * 90 0.1 DC operation Ta = 25C 0.01 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1 10 60 30 0.001 0.1 VDSS max 100 1000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 VDD = 90 V, L = 203 mH Wave form AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-06 2SK3374 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06 |
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