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| Datasheet File OCR Text: |
| NTE350F Silicon NPN Transistor RF Power AMP Description: The NTE350F is designed for 12.5 Volt large-signal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: D Specified 12.5 Volt, 175MHz Characteristics: Output Power = 15 Watts Minimum Gain = 6.3dB Efficiency = 60% D Characterized with Series Equivalent Large-Signal Impedance Parameters Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Total Device Dissipation, PD TC = +25C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31W Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177W/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Note 1. Device is designed for RF operation. The total dissipation rating applies only when the devices are operated as RF amplifiers. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common-Emitter Amplifier Gain Collector Efficiency GPE POUT = 15W, VCC = 12.5V, f = 175MHz POUT = 15W, VCC = 12.5V, f = 175MHz 6.3 60 - - - - dB % Cob VCB = 15V, IE = 0, f = 0.1MHz - 70 85 pF hFE IC = 0.5A, VCE = 5.0V 5.0 - - V(BR)CEO IC = 20mA, IB = 0 V(BR)CES IC = 10mA, VBE = 0 V(BR)EBO IE = 2.0mA, IC = 0 ICES ICBO VCE = 15V, VBE = 0, TC = +55C VCB = 15V, IE = 0 18 36 4.0 - - - - - - - - - - 8.0 0.5 V V V mA mA Symbol Test Conditions Min Typ Max Unit .725 (18.42) .122 (3.1) Dia (2 Holes) C E .250 (6.35) B .225 (5.72) E .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14) |
Price & Availability of NTE350F
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