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| ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( ) 0.040 @ VGS= 4.5V 20 0.055 @ VGS= 2.5V 0.075 @ VGS= 1.8V ID (A) 5.4 4.6 4.0 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive. Features * * * * Low on-resistance Fast switching speed Low gate drive capability SOT23-6 package D G S Applications * * * * DC-DC converters Power management functions Disconnect switches Motor control D D G Top view 3,000 D D S Ordering information Device ZXMN2B03E6TA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel Device marking 2B3 Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN2B03E6 Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 4.5V; Tamb=25C(b) @ VGS= 4.5V; Tamb=70C(b) @ VGS= 4.5V; Tamb=25C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 20 8 5.4 4.3 4.3 26 2.8 26 1.1 8.8 1.7 13.7 -55 to +150 A A A W mW/C W mW/C C Unit V V A Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R JA R JA Limit 113 73 Unit C/W C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN2B03E6 Thermal characteristics Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN2B03E6 Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Static Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (*) IDSS IGSS VGS(th) RDS(on) 0.4 20 1 100 1.0 0.040 0.055 0.075 Forward transconductance(*) () Dynamic() Input capacitance Output capacitance Reverse transfer capacitance Switching () () Turn-on-delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate drain charge Source-drain diode Diode forward voltage(*) Reverse recovery time() Reverse recovery charge() VSD trr Qrr 0.67 10.8 3.4 0.95 V ns nC Tj=25C, IS= 1.8A, VGS=0V Tj=25C, IF= 2.8A, di/dt=100A/ s td(on) tr td(off) tf Qg Qgs Qgd 4.2 6.2 33.9 12.4 14.5 2 2.8 ns ns ns ns nC nC nC VDS= 10V, VGS= 4.5V ID= 4.3A VDD= 10V, VGS= 4.5V ID= 1A RG 6.0 Ciss Coss Crss 1160 210 136 pF pF pF VDS= 10V, VGS=0V f=1MHz gfs 13.5 S V A nA V ID= 250 A, VGS=0V VDS= 20V, VGS=0V VGS=8V, VDS=0V ID= 250 A, VDS=VGS VGS= 4.5V, ID= 4.3A VGS= 2.5V, ID= 3.7A VGS= 1.8V, ID= 3.2A VDS= 10V, ID= 4.3A Symbol Min. Typ. Max. Unit Conditions NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing. Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN2B03E6 Typical characteristics Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN2B03E6 Typical characteristics Current regulator QG 12V 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG RD VDS VCC 10% VGS td(on) t(on) tr td(off) t(on) tr Switching time waveforms Switching time test circuit Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com ZXMN2B03E6 Intentionally left blank Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN2B03E6 Package outline - SOT23-6 DIM A A1 A2 b C D E E1 L e e1 L Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20 1.30 0.10 Millimeters Max. 1.45 0.15 1.30 0.50 0.26 3.10 3.20 1.80 0.60 0.95 REF 1.90 REF 0 30 0 Min. 0.354 0.00 0.0354 0.0078 0.0035 0.1062 0.0866 0.0511 0.0039 Inches Max. 0.0570 0.0059 0.0511 0.0196 0.0102 0.1220 0.1181 0.0708 0.0236 0.0374 REF 0.0748 REF 30 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 8 www.zetex.com |
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