|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 20V; RDS(ON)= 0.025 DESCRIPTION ; ID= 7.7A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package SO8 APPLICATIONS * DC - DC converters * Power management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMN2A04DN8TA ZXMN2A04DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING ZXMN 2A04D Top view ISSUE 1 - JULY 2004 1 SEMICONDUCTORS ZXMN2A04DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; T A =25C) (b) (d) (V GS =10V; T A =70C) (b) (d) (V GS =10V; T A =25C) (a) (d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) (d) Linear Derating Factor Power Dissipation at T A =25C (a) (e) Linear Derating Factor Power Dissipation at T A =25C (b) (d) Linear Derating Factor Operating and Storage Temperature Range T j :T stg I DM IS I SM PD PD PD SYMBOL V DSS V GS ID LIMIT 20 12 7.7 6.2 5.9 38 2.9 38 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A A A A A A W mW/C W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) (d) Junction to Ambient (b) (e) Junction to Ambient NOTES: (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (b) (d) SYMBOL R JA R JA R JA VALUE 100 70 60 UNIT C/W C/W C/W (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature. Refer to Trnsient Thermal Impedance Graph. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. ISSUE 1 - JULY 2004 SEMICONDUCTORS 2 ZXMN2A04DN8 CHARACTERISTICS ISSUE 1 - JULY 2004 3 SEMICONDUCTORS ZXMN2A04DN8 ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 0.85 18.0 8.9 0.95 V ns nC T J =25C, I S =5.1A, V GS =0V T J =25C, I F =1.9A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Qg Q gs Q gd 7.9 14.8 50.5 30.6 22.1 40.5 5.6 8.0 ns ns ns ns nC nC nC nC V DS =10V,V GS =4.5V, I D =5.9A V DS =15V,V GS =5V, I D =3.5A V DD =10V, I D =1A R G 6 , V GS =5V C iss C oss C rss 1880 506 386 pF pF pF V DS =10V, V GS =0V, f=1MHz g fs 40 V (BR)DSS I DSS I GSS V GS(th) R DS(on) 0.7 0.025 0.035 S 20 0.5 100 V A nA V I D =250 A, V GS =0V V DS =20V, V GS =0V V GS = 12V, V DS =0V I =250 A, V DS = V GS D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V GS =4.5V, I D =5.9A V GS =2.5V, I D =5A V DS =10V,I D =5.9A NOTES: (1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JULY 2004 SEMICONDUCTORS 4 ZXMN2A04DN8 TYPICAL CHARACTERISTICS ISSUE 1 - JULY 2004 5 SEMICONDUCTORS ZXMN2A04DN8 TYPICAL CHARACTERISTICS ISSUE 1 - JULY 2004 SEMICONDUCTORS 6 ZXMN2A04DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES MILLIMETERS MIN 1.35 0.10 4.80 5.80 3.80 0.40 MAX 1.75 0.25 5.00 6.20 4.00 1.27 DIM MIN A A1 0.053 0.004 0.189 0.228 0.150 0.016 MAX 0.069 0.010 0.197 0.244 0.157 0.050 D E H D H L Pin 1 E c L A e 0.050 BSC 0.013 0.008 0 0.020 0.010 8 0.020 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 Seating Plane A1 b e b c CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES h 0.010 (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JULY 2004 7 SEMICONDUCTORS |
Price & Availability of ZXMN2A04DN804 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |