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| WTD9575 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 P b Lead(Pb)-Free 1 GATE DRAIN DRAIN CURRENT -15 AMPERES DRAIN SOURCE VOLTAGE -60 VOLTAGE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <90m @V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package Features: SOURCE 2 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25C) , (VGS@10V, TC=100C) Pulsed Drain Current 1 Symbol VDS VGS ID IDM PD RJC RJA TJ,Tstg Value -60 25 -15 -9.5 -45 36 3.5 110 - 55~+150 Unit V A Total Power Dissipation(TC=25C) Maximum Thermal Resistace Junction-case Maximum Thermal Resistace Junction-ambient Operating Junction and Storage Temperature Range W C/W C/W C Device Marking WTD9575=9575 http:www.weitron.com.tw WEITRON 1/6 01-Aug-05 WTD9575 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-250A Gate-Source Threshold Voltage VDS=VGS,ID=-250A Gate-Source Leakage current VGS=25V Drain-SourceLeakage Current(Tj=25C) VDS=-60V,VGS=0 Drain-SourceLeakage Current(Tj=70C) VDS=-48V,VGS=0 Drain-SourceOn-Resistance VGS=-10V,ID=-12A VGS=-4.5V,ID=-9A Forward Transconductance VDS=-10V,I D=-9A BVDSS VGS(Th) IGSS -60 -1.0 IDSS -25 V -3.0 100 -1 A nA RDS(on) - - 90 120 m gfs - 14 - S Dynamic Input Capacitance VGS=0V,VDS=-25V,f=1.0MHz Output Capacitance VGS=0V,VDS=-25V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=-25V,f=1.0MHz Ciss Coss Crss 1660 160 100 2660 pF http:www.weitron.com.tw WEITRON 2/6 01-Aug-05 WTD9575 Switching Turn-on Delay Time2 VDS=-30V,VGS=-10V,ID=-9A,RD=3.3,RG=3.3 Rise Time VDS=-30V,VGS=-10V,ID=-9A,RD=3.3,RG=3.3 Turn-off Delay Time VDS=-30V,VGS=-10V,ID=-9A,RD=3.3,RG=3.3 Fall Time VDS=-30V,VGS=-10V,ID=-9A,RD=3.3,RG=3.3 Total Gate Charge2 VDS=-48V,VGS=-4.5V,ID=-9A Gate-Source Charge VDS=-48V,VGS=-4.5V,ID=-9A Gate-Source Change VDS=-48V,VGS=-4.5V,ID=-9A td(on) tr td(off) tf Qg Qgs Qgd 10 19 46 53 17 5 6 ns 27 nC Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=-9A Reverse Recovery Time VGS=0V,IS=-9A,dl/dt=100A/s Reverse Recovery Charge VGS=0V,IS=-9A,dl/dt=100A/s Note: 1. Pulse width limited by safe operating area. 2. Pulse width 300s, duty cycle 2%. VSD T rr Q rr - 56 159 -1.2 - V ns nC http:www.weitron.com.tw WEITRON 3/6 01-Aug-05 WTD9575 55 50 45 -10V -6.0V 40 35 -I D ,DRAIN CURRENT (A) 40 35 30 25 20 15 10 5 0 0 -4.5V ID ,Drain Current (A) TC =25C -5.0V 30 25 20 15 10 5 TC =150C -10V -6.0V -5.0V -4.5V VG=-3.0V VG=-3.0V 2 4 6 8 10 0 0 2 FIG.1 Typical Output Characteristics 1400 1200 1000 2.0 -VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) 4 6 8 10 12 I D = -9A TC = 25C Normalized RDs(on) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 I D = -12A VG = -10V RDs(on) (m) 800 600 400 200 1 Fig.3 On-Resistance v.s. Gate Voltage 15.0 12.5 2.0 10.0 7.5 2.5 -VGS ,Gate-to-source Voltage(V) 4 7 10 0 50 100 150 Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) -VGS(th)(V) 1.4 Tj = 150C Tj = 25C -IS(A) 1.5 5.0 1.0 2.5 0.0 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 Fig.5 Forward Characteristics of Reverse Diode -VDS ,Source-to-Drain Voltage(V) Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 01-Aug-05 WTD9575 12 10000 f = 1.0MHz -VGS , Gate to Source Voltage(V) 10 I D = -9A VDS = -48V 1000 Ciss 8 C(pF) 6 Coss 100 4 2 Crss 0 0 10 20 30 40 10 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics 100 QG , Total Gate Charge(nC) -VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response(R jc ) Duty factor = 0.5 10 100us 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse -I D(A) 1ms 10ms 100ms DC TC = 25C Single Pulse 0.1 0.1 1 10 100 1000 PDM t T 1 Duty factor = t / T Peak Tj=PDM x R jc + Tc t, Pulse Width(s) 0.001 0.01 0.1 1 -VDS , Drain-to-Source Voltage(V) 0.01 0.00001 0.0001 Fig 9. Maximum Safe Operation Area VDS 90% Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS 10% VGS t d(on) t r t d(off) t f QGD Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 01-Aug-05 WTD9575 D-PAK / (TO-252) Outline Dimension Unit:mm E A 4 D-PAK G H J 1 2 3 B M D C L K Dim A B C D E G H J K L M Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 Max WEITRON http://www.weitron.com.tw 6/6 01-Aug-05 |
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