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UN230 TA806 RC841T 2SC28 UZ4707 E6601 SBL4R01J 3DD1300
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TGF4240-EPU
2.4mm Discrete HFET
q q q q q q
2400 m x 0.5 m Nominal Pout of 31.5 - dBm at 8.5 GHz Nominal Gain of 10 - dB at 8.5 GHz Nominal PAE of 56% at 8.5 GHz Suitable for high reliability applications 0,572 x 0,978 x 0,102 mm (0.023 x 0.039 x 0.004 in.)
4240
70
Freq = 8.5 GHz VD = 8 V I D = 100mA TA = 25 C
PRELIMINARY RF PERFORMANCE
Gain - dB and Output Power - dBm
35 30 25 20 15 10 5 0 0 5 10 15 20 25 Pout(dBm) Gain(dB) PAE(%)
60 50 40 30 20 10 0
Input Power - dBm
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
Power Added Efficiency - %


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