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| ST5771-1 Discrete POWER & Signal Technologies ST5771-1 C BE TO-92 PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 100mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 15 15 4.5 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max ST5771-1 350 2.8 125 357 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation ST5771-1 PNP Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CES ICBO ICES IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current I C = 3.0 mA, I B = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 I C = 100 A VCB = 8.0 V, IE = 0 VCE = 8.0 V, IE = 0 VCE = 8.0 V, IE = 0, TA = 125 0C VEB = 4.5 V, IC = 0 15 15 4.5 15 10 10 5.0 1.0 V V V V nA nA A A ON CHARACTERISTICS* hFE DC Current Gain IC = 10 mA, VCE = 0.3 V IC = 10 mA, VCE = 0.3 V, TA = - 55 C IC = 1.0 mA, VCE = 0.5 V IC = 50 mA, VCE = 1.0 V IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 30 15 30 20 0.15 0.18 0.6 0.8 0.95 1.5 V V V V V V 150 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 0.8 SMALL SIGNAL CHARACTERISTICS Ccb Ceb hfe Collector-Base Capacitance Emitter-Base Capacitance Small-Signal Current Gain VCB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz IC = 10 mA, VCE = 10 V, f = 100 MHz 7.0 3.0 3.5 pF pF SWITCHING CHARACTERISTICS ts ton td tr toff ts tf Storage Time Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 1.5 V, IC = 10 mA I B1 = IB2 = 1.0 mA VCC = 3.0 V I C = IB1 = IB2 = 1.0 mA VCC = 1.5 V, IC = 10 mA, I B1 = 1.0 mA 20 15 10 15 20 20 10 ns ns ns ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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