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 BSS 98
SIPMOS (R) Small-Signal Transistor
* N channel * Enhancement mode * Logic Level
* VGS(th) = 0.8...1.6 V
Pin 1 S
Type
Pin 2 G
Marking
Pin 3 D
VDS
50 V
ID
0.3 A
RDS(on)
3.5
Package
BSS 98
Type BSS 98 BSS 98 BSS 98
TO-92
SS98
Ordering Code Q62702-S053 Q62702-S517 Q62702-S635
Tape and Reel Information E6288 E6296 E6325
Maximum Ratings Parameter Symbol Values Unit
Drain source voltage Drain-gate voltage
RGS = 20 k
VDS V
DGR
50
V
50
VGS
Gate source voltage ESD Sensitivity as per MIL-STD 883 Continuous drain current
TA = 25 C
20
Class 1 A 0.3
ID
DC drain current, pulsed
TA = 25 C
IDpuls
1.2
Ptot
Power dissipation
TA = 25 C
W 0.63
Data Sheet
1
05.99
BSS 98
Maximum Ratings Parameter Symbol Values Unit
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJA
-55 ... + 150 -55 ... + 150
C
200
E 55 / 150 / 56
K/W
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 C
V (BR)DSS
V 50 -
Gate threshold voltage
VGS=V DS, ID = 1 mA
V GS(th)
0.8
IDSS
1.2
1.6
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 125 C VDS = 30 V, VGS = 0 V, Tj = 25 C
IGSS
0.05 -
0.5 5 100
A
nA nA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-state resistance
VGS = 10 V, ID = 0.3 A VGS = 4.5 V, ID = 0.3 A
1.8 2.8 3.5 6
Data Sheet
2
05.99
BSS 98
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit
Transconductance
VDS 2 * ID * RDS(on)max, ID = 0.3 A
gfs
S 0.12 0.23 pF 40 55
Input capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
15
25
Reverse transfer capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
5
8 ns
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
tr
5
8
Rise time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
td(off)
6
9
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
tf
12
16
Fall time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50
-
15
20
Data Sheet
3
05.99
BSS 98
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TA = 25 C
IS
A 0.3
Inverse diode direct current,pulsed
TA = 25 C
ISM
V SD
-
1.2 V
Inverse diode forward voltage
VGS = 0 V, IF = 0.6 A
-
1
1.4
Data Sheet
4
05.99
BSS 98
Power dissipation Ptot = (TA)
Drain current ID = (TA) parameter: VGS 10 V
0.32
0.70 W 0.60
A
Ptot
0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20
ID
0.24
0.20
0.16
0.12
0.08 0.15 0.10 0.05 0.00 0 20 40 60 80 100 120 C 160 0.04 0.00 0 20 40 60 80 100 120 C 160
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C
Drain-source breakdown voltage V(BR)DSS = (Tj)
60 V 58
V(BR)DSS 57
56 55 54 53 52 51 50 49 48 47 46 45 -60
-20
20
60
100
C
160
Tj
Data Sheet
5
05.99
BSS 98
Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C
0.70 A 0.60
Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C
11
Ptot = 1W
lk i h j g
VGS [V] a 2.0
RDS (on)
9 8 7 6 5 4 3 2
b
ab
c
d
e
f
ID
0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20
c e f
b c d e f g h
2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
di
j k l
g h i kl j
0.15 0.10 0.05 0.00
a
VGS [V] =
1 0 V 5.0 0.00
a 2.0
b 2.5
c 3.0
d 3.5
e f 4.0 4.5
g 5.0
h i 6.0 7.0
j 8.0
k l 9.0 10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.10
0.20
0.30
0.40
A
0.60
VDS
ID
Typ. transfer characteristics ID = f(VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 s
VDS 2 x ID x RDS(on)max
0.65 A 0.55
ID
parameter: tp = 80 s,
V DS2 x ID x RDS(on)max
0.30 S 0.26
gfs
0.50 0.45
0.24 0.22 0.20
0.40 0.35 0.30 0.25 0.20 0.15
0.18 0.16 0.14 0.12 0.10 0.08 0.06
0.10 0.05 0.00 0 1 2 3 4 5 6 7 8 V
VGS
0.04 0.02 0.00 10 0.00 0.10 0.20 0.30 0.40 A
ID
0.55
Data Sheet
6
05.99
BSS 98
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.3 A, VGS = 10 V
9
Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA
2.6 V 2.2
RDS (on)
7 6 5
VGS(th)
2.0 1.8 1.6 1.4
98%
98%
4 3 1.2 1.0 0.8
typ
2%
typ
2 1 0.2 0 -60 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 0.6 0.4
Tj
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
10 1
pF
C
A
IF
10 2 10 0
Ciss
10 1
Coss
10 -1
Tj = 25 C typ
Crss
Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
10 0 0
5
10
15
20
25
30
V
VDS
40
10 -2 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Data Sheet
7
05.99


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