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| Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 A (Max.) @ VDS = -200V ! Lower RDS(ON) : 0.344 (Typ.) SFH9240 BVDSS = -200 V RDS(on) = 0.5 ID = -11 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds o o o Value -200 -11 -7.7 1 O Units V A A V mJ A mJ V/ns W W/ C o -44 + 30 _ 807 -11 12.6 -5.0 126 1.0 - 55 to +150 O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 1.0 -40 o Units C/W Rev. A SFH9240 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( " Miller " ) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.16 ------6.5 207 81 16 23 54 19 46 9.2 22.9 ---4.0 -100 100 -10 -100 0.5 -310 120 40 55 115 50 59 --nC ns A S pF V o P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250A See Fig 7 VDS=-5V,ID=-250A VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-5.5A VDS=-40V,ID=-5.5A 4 O 4 O o V/ C ID=-250A V nA 1220 1585 VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-11A, RG=9.1 See Fig 13 45 OO VDS=-160V,VGS=-10V, ID=-11A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------180 1.24 -11 -44 -5.0 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-11A,VGS=0V TJ=25 C,IF=-11A diF/dt=100A/s 4 O o o 1 O 2 O 3 O 4 O 5 O Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=10mH, IAS=-11A, VDD=-50V, RG=27*, Starting TJ =25oC _ _ _ ISD <-11A, di/dt < 450A/s, VDD < BVDSS , Starting TJ =25oC _ Pulse Test : Pulse Width = 250s, Duty Cycle < 2% Essentially Independent of Operating Temperature P-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS Top : -1 V 5 -1 V 0 - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V SFH9240 Fig 2. Transfer Characteristics -ID , Drain Current [A] -ID , Drain Current [A] 11 0 11 0 1 0 oC 5 10 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =-0V . DS 4 3 2 0 s P l e T s .5 us et 6 8 1 0 10 0 @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 1 -1 -1 0 1 0 10 0 11 0 - 5 oC 5 1 -1 0 2 4 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 15 .0 Fig 4. Source-Drain Diode Forward Voltage -IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 12 .5 11 0 10 .0 V =-0V 1 GS 07 .5 10 0 05 .0 1 0 oC 5 2 oC 5 @Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et 20 . 25 . 30 . 35 . 40 . 45 . 50 . 02 .5 V =-0V 2 GS 00 .0 0 7 1 4 2 1 2 8 @ N t : T = 2 oC oe J 5 3 5 4 2 1 -1 0 05 . 10 . 15 . -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 20 50 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd C iss 10 50 C oss 10 00 C rss 50 0 @Nts: oe 1 V =0V . GS 2 f=1Mz . H Fig 6. Gate Charge vs. Gate-Source Voltage -VGS , Gate-Source Voltage [V] 20 00 1 0 Capacitance [pF] V =-0V 4 DS V =-0 V 10 DS V =-6 V 10 DS 5 @Nts:I =1 A oe D -1 0 0 1 0 2 0 3 0 4 0 5 0 00 1 0 11 0 -VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SFH9240 Fig 7. Breakdown Voltage vs. Temperature 12 . 30 . P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature -BVDSS , (Normalized) Drain-Source Breakdown Voltage 11 . RDS(on) , (Normalized) Drain-Source On-Resistance 25 . 20 . 10 . 15 . 10 . @Nts: oe 1 V =-0V . GS 1 2 I =-. A . D 55 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 09 . @Nts: oe 1 V =0V . GS 2 I = - 5 A . D 20 -0 5 -5 2 0 2 5 5 0 7 5 10 0 o 05 . 08 . -5 7 15 2 10 5 15 7 00 . -5 7 TJ , Junction Temperature [ C] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area -ID , Drain Current [A] 12 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y Fig 10. Max. Drain Current vs. Case Temperature 1 2 1 0 -ID , Drain Current [A] 01m .s 11 0 D C 10 0 @Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us 1 -1 0 0 1 0 1m s 1m 0s 8 6 4 2 11 0 12 0 0 2 5 5 0 7 5 10 0 15 2 10 5 -VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response Thermal Response 100 D=0.5 @ Notes : 1. Z J C (t)=1.0 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) P. DM 0.2 10- 1 0.1 0.05 0.02 0.01 single pulse Z (t) , JC t1. t2. 10- 2 - 5 10 10- 4 10- 3 10- 2 10- 1 100 101 t 1 , Square Wave Pulse Duration [sec] P-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform SFH9240 " Current Regulator " 50K 12V 200nF 300nF Same Type as DUT VGS Qg -10V VDS VGS DUT -3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT -10V Vout 90% t on t off tr td(off) tf VDD ( 0.5 rated VDS ) td(on) Vin 10% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD tp ID VDD Time VDS (t) RG DUT -10V tp C VDD IAS BVDSS ID (t) SFH9240 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms P-CHANNEL POWER MOSFET + VDS DUT -IS L Driver RG VGS Compliment of DUT (N-Channel) VGS VDD * dv/dt controlled by "RG" * IS controlled by Duty Factor "D" VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IS ( DUT ) IRM di/dt IFM , Body Diode Forward Current Vf VDS ( DUT ) Body Diode Forward Voltage Drop Body Diode Recovery dv/dt VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST (R) DISCLAIMER FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGIC (R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H7 |
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