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SEMiX 452GB176HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX(R) 2s Trench IGBT Modules
SEMiX 452GB176HDs
Inverse diode
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Target Data
Features
Typical Applications
Inverse diode
Thermal characteristics
Temperature sensor
Mechanical data
GB
1
15-06-2005 SEN
(c) by SEMIKRON
SEMiX 452GB176HDs
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
2
15-06-2005 SEN
(c) by SEMIKRON

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Price & Availability of SEMIX452GB176HDS

Part #	Manufacturer	Description	Price	BuyNow Qty.
SEMIX452GB176HDS 02P3282	SEMIKRON	Igbt Module, Dual, 1.2Kv, 430A; Dc Collector Current:430A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:-; Junction Temperature, Tj Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage V(Br)Ceo:1.7Kv Rohs Compliant: Yes \|Semikron SEMIX452GB176HDS	5: USD258.48	0

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