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| Product Description Stanford Microdevices SCA-3 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is 32.8 dBm. These unconditionally stable amplifiers provide 13.7 dB of gain and 17.3 dBm of 1dB compressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET. 16 15 14 Small Signal Gain vs. Frequency @ ID=65mA SCA-3 Preliminary Preliminary DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier NGA-489 Recommended for New Designs dB 13 12 11 10 0 1 2 3 4 5 6 Product Features High Output IP3: 32.8 dBm @ 850 MHz Cascadable 50 Ohm Gain Block Patented GaAs HBT Technology Operates From Single Supply Applications Cellular, PCS, CDPD, Wireless Data, SONET Units Min. Ty p. 17.3 17.6 17.4 29.8 32.8 30.3 29.1 13.7 13.6 13.6 5000 1.7:1 1.5:1 18.3 18.4 18.4 5.6 4.4 4.9 224 5.4 Max. Frequency (GHz) Electrical Specifications Sy mbol Parameters: Test Conditions: GHz Z0 = 50 Ohms, ID = 65mA, T = 25C Output Pow er at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz P1dB dBm dBm dBm dBm dBm dBm dB dB dB MHz IP3 Third Order Intercept Point Pow er out per tone = 0 dBm S21 Bandw idth S11 S22 S12 NF VD Rth,j-l Small Signal Gain (Determined by S11, S22 Values) Input VSWR Output VSWR Reverse Isolation Noise Figure, ZS = 50 Ohms Device Voltage Thermal Resistance (junction - lead) 12.3 f = DC-5000 MHz f = DC-5000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 1950 MHz dB dB dB dB V o C/W The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101392 Rev A Preliminary Preliminary SCA-3 DC-5GHz Cascadable MMIC Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l Parameter Supply Current Operating Temperature M aximum Input Pow er Storage Temperature Range Operating Junction Temperature Value 120 -40 to +85 +16 -40 to +150 +175 Unit mA C dBm C C Parameter 500 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 850 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 1950 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 2400 MH z Gai n Output IP3 Output P1dB Input Return Loss Isolati on Ty pical 25C 13.7 5.4 32.3 17.1 12.8 18.2 13.7 5.5 32.8 17.3 12.3 18.3 13.6 5.6 30.3 17.6 12.9 18.2 13.6 29.1 17.4 15.2 18.4 U nit Test C ondition (ID = 65 mA, unless otherwise noted) dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB dB dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB *NOTE: While the SCA-3 can be operated at different bias currents, 65 mA is the recommended bias for lower junction temperature and longer life. This reflects typical operating conditions which we have found to be an optimal balance between high IP3 and MTTF. In general, MTTF is improved to more than 100,000 hours when biasing at 65 mA and operating up to 85C ambient temperature. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101392 Rev A Preliminary Preliminary SCA-3 DC-5GHz Cascadable MMIC Amplifier Junction Temp vs. Dissipated Power 250 MTTF vs. Dissipated Power 1.E+07 Device Lead Temp = +85C Junction Temperature (C) Device Lead Temp = +85 C 230 1.E+06 210 190 +175C 170 150 0.35 Pdiss (W) Output IP3 vs. ID vs. Frequency 0.45 0.55 MTTF (hrs) 1.E+05 1.E+04 1.E+03 0.35 Pdiss (W) Output P1dB vs. ID vs. Frequency 0.45 0.55 40 IP3_65mA IP3_80mA 20 P1dB_65mA 19 dBm P1dB_80mA P1dB_100mA 35 dBm IP3_100mA 18 17 16 30 25 0.5 1.5 GHz 15 2.5 3.5 0.5 1.5 GHz 2.5 3.5 NF vs. ID vs. Frequency 6 .5 15 Small Signal Gain vs. ID vs. Frequency G_65mA G_80mA G_100mA 6 dB dB N F_65m A N F_80m A NF_100mA 14 5 .5 13 5 0.5 1 GHz 1 .5 2 12 0.5 1.5 GHz 2.5 3.5 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101392 Rev A Preliminary Preliminary SCA-3 DC-5GHz Cascadable MMIC Amplifier Pin # 1 2 3 Function RF IN GND RF OUT/Vcc Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance. Place vias as close to ground leads as possible. RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias netw ork should be w ell bypassed. Same as Pin 2. 4 GND Application Schematic for Operation at 850 MHz R ecommended B ias R esistor Values Supply Voltage(Vs) R bias (Ohms) @ 65 mA R bias (Ohms) @ 80 mA R bias (Ohms) @ 100 mA 8V 47 39 30 9V 62 51 43 12V 110 91 68 15V 160 130 100 1uF 68pF Rbias VS 33nH 50 ohm microstrip 2 1 100pF 3 4 100pF 50 ohm microstrip Application Schematic for Operation at 1950 MHz 1uF 22pF Rbias VS 22nH 50 ohm microstrip 2 1 68pF 3 4 68pF 50 ohm microstrip 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101392 Rev A Preliminary Preliminary SCA-3 DC-5GHz Cascadable MMIC Amplifier S21, ID=65mA, T=25C 16 15 14 -10 -15 S12, ID=65mA, T=25C dB 13 12 11 10 0 1 2 3 4 5 6 dB -20 -25 -30 Frequency GHz 0 1 2 Frequency GHz 3 4 5 6 S11, ID=65mA, T=25C 0 -5 0 -5 S22, ID=65mA, T=25C dB -10 -15 -20 -25 -30 0 1 2 3 4 5 6 dB -10 -15 -20 -25 -30 0 1 2 3 4 5 6 Frequency GHz Frequency GHz S11, ID=65mA, Ta=25C Freq. Min = 0.05 GHz Freq. Max = 6.0 GHz S22, ID=65mA, Ta=25C Freq. Min = 0.05 GHz Freq. Max = 6.0 GHz F = 6.0 GHz F = 6.0 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101392 Rev A Preliminary Preliminary SCA-3 DC-5GHz Cascadable MMIC Amplifier Appropriate precautions in handling, packaging and testing devices must be observed. Caution: ESD Sensitive Part Number Ordering Information Part N umber SC A-3 R eel Siz e 7" D ev ices/R eel 1000 Part Symbolization The part will be symbolized with a C3 designator on the top surface of the package. Outline Drawing 1 Mounting Instructions The data shown was taken on a 31 mil thick FR-4 board with 1 ounce of copper on both sides. The board was mounted to a baseplate with 3 screws as shown. The screws bring the top side copper temperature to the same value as the baseplate. 1. Use 1 or 2 ounce copper, if possible. 2. Solder the copper pad on the backside of the device package to the ground plane. 3. Use a large ground pad area with many plated throughholes as shown. 4. If possible, use at least one screw no more than 0.2 inch from the device package to provide a low thermal resistance path to the baseplate of the package. 5. Thermal resistance from ground lead to screws is 2 deg. C/W. 2 3 PCB Pad Layout C3 4 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101392 Rev A |
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