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 NTE6234 Powerblock Module
Description: The NTE6234 uses 2 high voltage power diodes in series and the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required. Features: D High Voltage D Electrically Isolated Base Plate D 3000VRMS Isolating Voltage D High Surge Capability D Large Creepage Distances Ratings and Characteristics: Average Forward Current (TC = +100C, 180 Conduction, Half Sine Wave), IF(AV) . . . . . . . . . 195A Maximum RMS Forward Current (As AC Switch), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 305A Maximum Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Maximum Non-Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Maximum Peak Reverse Current (TJ = +150C), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3000V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case (Per Module, DC Operation), RthJC . . . . . . . . . . . 0.20C/W Thermal Resistance, Case-to-Sink (Per Module, Note 1), RthCS . . . . . . . . . . . . . . . . . . . 0.035C/W Note 1. Mounting surface flat, smooth and greased. Electrical Specifications:
Parameter Maximum Peak One-Cycle Non-Repetitive Surge Current Symbol IFSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms Test Conditions Sinusoidal Half Wave, 100% VRRM Reapplied, Initial TJ = +150C Sinusoidal Half Wave, No Voltage Reapplied, Initial TJ = +150C Rating 4000 4200 4750 4980 Unit A A A A
Electrical Specifications (Cont'd):
Parameter Maximum I2t for Fusing Symbol I2t t = 10ms t = 8.3ms t = 10ms t = 8.3ms Maximum I2pt Threshold Voltage, Low level Threshold Voltage, High level Forward Slope Resistance, Low Level Forward Slope Resistance, High Level Maximum Forward Voltage Drop I2pt VF(TO)1 VF(TO)2 rf1 rf2 VFM Test Conditions Sinusoidal Half Wave, 100% VRRM Reapplied, Initial TJ = +150C Sinusoidal Half Wave, No Voltage Reapplied, Initial TJ = +150C Rating 80 73 113 103 1130 0.75 0.86 0.92 0.77 1.32 Unit kA2s kA2s kA2s kA2s kA2pt V V m m V
t = 0.1 to 10ms, no voltage reapplied TJ = +150C, (16.7% x x IT(AV) < I < x IT(AV)) TJ = +150C, ( x IT(AV) < I < 20 x x IT(AV)) TJ = +150C, (16.7% x x IT(AV) < I < x IT(AV)) TJ = +150C, ( x IT(AV) < I < 20 x x IT(AV)) TJ = +25C, IFM = x IF(AV), Av. Power = VF(TO) x IT(AV) + rf x (IF(RMS))2 Circuit Diagram
AC
+
-
K2 + AC - K1
G2
G1
.980 (25.0) .244 (6.2) Dia (2 Places)
.980 (25.0)
1.340 (34.0)
.270 (7.0) M6 x 1 Screw (3 Places)
3.150 (80.0)
1.180 (30.0)
1.850 (47.0)
3.700 (94.0)


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