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| Datasheet File OCR Text: |
| NTE5461 thru NTE5468 Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half- wave AC control applications such as motor controls, heating controls, and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. These devices are supplied in a TO220 type package. Features; D Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability D Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation, and Durability D Blocking Voltage to 800 Volts Absolute Maximum Ratings: Peak Repetitive Reverse Voltage; Peak Repetitive Off-State Voltage (Note 1), VRRM, VDRM NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Non-Repetitive Peak Reverse Voltage; Non-Repetitive Off-State Voltage, VRSM, VDSM NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125V NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V RMS Forward Current (All Conducting Angles, TC = +75C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . 10A Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, TC = +80C), ITSM . . . . . . . . . . . . . . 100A Circuit Fusing Considerations (TJ = -65 to +100C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . 40A2s Forward Peak gate Power (t 10s), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2C/W Note 1. VDRM and VRRM for all types can be applied on a continuous DC basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Peak Forward or Reverse Blocking Current Instantaneous On-State Voltage Gate Trigger Current (Continuous DC) Gate Trigger Voltage (Continuous DC) Holding Current Gate Controlled Turn-On Time Circuit Commutated Turn-Off Time Symbol IDRM, IRRM VT IGT VGT IH tgt tq Test Conditions Rated VDRM or VRRM TC = +25C TC = +100C ITM = 30A(Peak), Pulse Width 1ms, Duty Cycle 2% VD = 12V, RL = 30 VD = 12V, RL = 30 Gate Open, VD = 12V, IT = 150mA VD = Rated VDRM, ITM = 2A, IGR = 80mA VD = VDRM, ITM = 2A, Pulse Width = 50s, dv/dt = 200V/s, di/dt = 10A/s, TC = +75C VD = Rated VDRM, Exponential Rise, TC = +100C Min - - - - - - - - Typ - - 1.7 8 0.9 10 1.6 25 Max Unit 10 2 2.0 15 1.5 20 - - A mA V mA V mA s s Critical Rate-of-Rise of Off-State Voltage dv/dt - 100 - V/s .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max Anode .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode .100 (2.54) Gate Anode |
Price & Availability of NTE5468
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