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NTE340 Silicon NPN Transistor RF Power Output, High Frequency
Features: D High Transition Frequency D Output of 0.6W can be obtained in the VHF Band (f = 175MHz). Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Peak Collector Voltage, ICP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current DC Current Gain Transition Frequency Collector Output Capacitance High-Frequency Output Overall Efficiency Symbol ICBO hFE fT Cob PO Test Conditions VCB = 20V, IE = 0 VCE = 13.5V, IC = 100mA VCB = 10V, IE = -100mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCC = 13.5V, PI = 0.03W, f = 175MHz VCC = 13.5V, PI = 0.03W, f = 175MHz Min - 20 1.5 - 0.6 - Typ - 50 2 4 0.9 60 Max 10 - - 8 - - Unit A - GHz pF W %
.339 (8.62) Max Seating Plane
.512 (13.0) Min
.026 (.66) Dia Max
ECB .100 (2.54)
.200 (5.08) Max
.240 (6.09) Max

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Price & Availability of NTE340

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE340 31C3950	NTE Electronics Inc	Transistor, bjt, npn,18V V(Br)Ceo,500Ma I(C),to-92Var Rohs Compliant: No \|Nte Electronics NTE340		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE340	NTE Electronics Inc	Transistor NPN Silicon 35V IC=0.5A Giant TO-92 Case Po=0.6W 130-175mhz	2500: USD5.82 1000: USD5.91 500: USD6.07 250: USD6.24 100: USD6.62 25: USD7.52 5: USD8.58 1: USD9.44	2

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE340	NTE Electronics Inc			4
NTE340	NTE Electronics Inc		4: USD7.28 1: USD11.2	5

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE340	NTE Electronics Inc	RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN, TO-92	4: USD6.5363 2: USD8.715 1: USD13.0725	10
NTE340	NTE Electronics Inc	RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN, TO-92	2: USD6.25 1: USD7.5	3
NTE340	NTE Electronics Inc	RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN, TO-92	4: USD7.5 2: USD10 1: USD15	4

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE340 NTE340	NTE Electronics Inc	Transistor: NPN; bipolar; 35V; 0.5A; 0.6W; TO92	25: USD6.51 10: USD7.25 3: USD8.2 1: USD9.11	8

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE340	NTE Electronics Inc	Transistor NPN Silicon 35V IC=0.5A Giant TO-92 Case Po=0.6W 130-175mhz	2500: USD5.82 1000: USD5.91 500: USD6.07 250: USD6.24 100: USD6.62 25: USD7.52 5: USD8.58 1: USD9.44	2

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