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| NTE2661 Silicon NPN Transistor Horizontal Deflection Output for HDTV Features: D High Speed: tf = 0.15s Typ D High Breakdown Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output capacitance Storage Time Fall Time Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tstg tf Test Conditions VCB = 1700V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 11A IC = 11A, IB = 2.75A IC = 11A, IB = 2.75A VCE = 10V, IE = 0.1A VCB = 10V, IE = 0, f = 1MHz IC(peak) = 10A, IB1 = 1.8A, fH = 64kHz Min - - 600 10 4.5 - - - - - - Typ - - - - - - 1.0 1.7 290 2.5 0.15 Max 1.0 10 - 30 8.5 3 1.3 - - 4.0 0.3 V V MHz pF s s Unit mA A V - V(BR)CEO IC = 10mA, IB = 0 .810 (20.57) Max .236 (6.0) .204 (5.2) 1.030 (26.16) .137 (3.5) Dia Max .098 (2.5) .787 (20.0) .215 (5.45) .040 (1.0) .023 (0.6) B C E NOTE: Pin2 connected to heatsink |
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